TWO-DIMENSIONAL ELECTROSTRICTIVE FIELD EFFECT TRANSISTOR (2D-EFET)

    公开(公告)号:US20200335637A1

    公开(公告)日:2020-10-22

    申请号:US16916454

    申请日:2020-06-30

    发明人: Saptarshi Das

    摘要: A device and method for manufacturing a two-dimensional electrostrictive field effect transistor having a substrate, a source, a drain, and a channel disposed between the source and the drain. The channel is a two-dimensional layered material and a gate proximate the channel. The gate has a column of an electrostrictive or piezoelectric or ferroelectric material, wherein an electrical input to the gate produces an elongation of the column that applies a force or mechanical stress on the channel and reduces a bandgap of two-dimensional material such that the two-dimensional electrostrictive field effect transistor operates with a subthreshold slope that is less than 60 mV/decade.

    APPARATUS AND PROCESS FOR FRACTURE CONDUCTIVITY TUNING

    公开(公告)号:US20240102372A1

    公开(公告)日:2024-03-28

    申请号:US18363003

    申请日:2023-08-01

    IPC分类号: E21B43/267 C09K8/80

    CPC分类号: E21B43/267 C09K8/80

    摘要: Tuning fracture hydraulic conductivity can be provided so that high hydraulic conductivity in high temperature zones and low hydraulic conductivity in low temperature zones can be defined in enhanced geothermal systems (EGS). Uniform thermal gradient along flow paths can be provided or defined to help provide such conductivity zones. Experimentation performed to evaluate embodiments showed that embodiments could prevent appearance of dominant flow paths between the wells and maintain high heat extraction rates. Embodiments can greatly increase cumulative heat extraction. Embodiments can also be provided for application solely to the injection wells. Other embodiments can position tuning agents between the wells and still help provide control of the fluid flow in the reservoir and enhance heat extraction.