公开(公告)号：US20110183079A1

公开(公告)日：2011-07-28

申请号：US12872040

申请日：2010-08-31

申请人： Thomas Jackson ,  Devin A. Mourey ,  Dalong Zhao

发明人： Thomas Jackson ,  Devin A. Mourey ,  Dalong Zhao

IPC分类号： C08F2/46

CPC分类号： C23C16/40 ,  C23C16/45542

摘要： Improved systems, methods and compositions for plasma enhanced atomic layer deposition are herein disclosed. According to one embodiment, a method includes exposing a substrate to a first process material to form a film comprising at least a portion of the first process material at a surface of the substrate. The substrate is exposed to a second process material and the second process material is activated into plasma to initiate a reaction between at least a portion of the first process material and at least a portion of the second process material at the surface of the substrate.

摘要翻译： 本文公开了用于等离子体增强的原子层沉积的改进的系统，方法和组合物。 根据一个实施例，一种方法包括将衬底暴露于第一工艺材料以形成在衬底的表面上包含第一工艺材料的至少一部分的膜。 衬底暴露于第二工艺材料，第二工艺材料被激活成等离子体以引发第一工艺材料的至少一部分与第二工艺材料的至少部分在衬底表面处的反应。