发明申请
- 专利标题： Semiconductor Device and Bump Formation Process
- 专利标题（中）： 半导体器件和凸块形成工艺
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申请号： US12883950申请日： 2010-09-16
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公开(公告)号： US20110186989A1公开(公告)日： 2011-08-04
- 发明人: Yi-Li Hsiao , Chen-Hua Yu , Shin-Puu Jeng , Chih-Hang Tung , Cheng-Chang Wei
- 申请人： Yi-Li Hsiao , Chen-Hua Yu , Shin-Puu Jeng , Chih-Hang Tung , Cheng-Chang Wei
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/44
摘要：
A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump.
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IPC分类:
