Resistive Memory Structure with Buffer Layer

Invention Application

US20110189819A1 Resistive Memory Structure with Buffer Layer 审中-公开

Title translation: 具有缓冲层的电阻式存储器结构

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Patent Title: Resistive Memory Structure with Buffer Layer
Patent Title (中): 具有缓冲层的电阻式存储器结构
Application No.: US13083450

Application Date: 2011-04-08
Publication No.: US20110189819A1

Publication Date: 2011-08-04
Inventor: Wei-Chih Chien , Kuo-Pin Chang , Erh-Kun Lai , Kuang Yeu Hsieh
Applicant: Wei-Chih Chien , Kuo-Pin Chang , Erh-Kun Lai , Kuang Yeu Hsieh
Applicant Address: TW Hsinchu
Assignee: Macronix International Co., Ltd.
Current Assignee: Macronix International Co., Ltd.
Current Assignee Address: TW Hsinchu
Main IPC: H01L21/8239
IPC: H01L21/8239

Resistive Memory Structure with Buffer Layer

Abstract:

A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and a nitride. Another memory device comprises first and second electrodes with a memory element and a buffer layer, having a thickness of less than 50 Å, located between and electrically coupled to them. The memory comprises one or more metal oxygen compounds. An example of a method of fabricating a memory device includes forming first and second electrodes. A memory, located between and electrically coupled to the first and the second electrodes, is formed; the memory comprises one or more metal oxygen compounds and the buffer layer comprises at least one of an oxide and a nitride.

Abstract(Chinese):

存储器件包括具有存储元件的第一和第二电极以及位于它们之间并与之电耦合的缓冲层。记忆元件包括一种或多种金属氧化合物。缓冲层包括氧化物和氮化物中的至少一种。另一个存储器件包括具有存储元件和缓冲层的第一和第二电极，其厚度小于50，位于它们之间并与之电耦合。记忆体包括一种或多种金属氧化合物。制造存储器件的方法的一个例子包括形成第一和第二电极。形成位于第一和第二电极之间并电耦合到第一和第二电极的存储器; 存储器包括一种或多种金属氧化合物，并且缓冲层包括氧化物和氮化物中的至少一种。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构