Invention Application
- Patent Title: SEMICONDUCTOR DEVICE WITH A BARRIER FILM
- Patent Title (中): 具有屏障膜的半导体器件
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Application No.: US13087026Application Date: 2011-04-14
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Publication No.: US20110189849A1Publication Date: 2011-08-04
- Inventor: Junichi KOIKE , Makoto Wada , Shingo Takahashi , Noriyoshi Shimizu , Hideki Shibata , Satoshi Nishikawa , Takamasa Usui , Hayato Nasu , Masaki Yoshimaru
- Applicant: Junichi KOIKE , Makoto Wada , Shingo Takahashi , Noriyoshi Shimizu , Hideki Shibata , Satoshi Nishikawa , Takamasa Usui , Hayato Nasu , Masaki Yoshimaru
- Applicant Address: JP YOKOHAMA-SHI
- Assignee: SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER
- Current Assignee: SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER
- Current Assignee Address: JP YOKOHAMA-SHI
- Priority: JP2004-053458 20040227; JP2005-027756 20050203
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.
Public/Granted literature
- US08133813B2 Semiconductor device with a barrier film Public/Granted day:2012-03-13
Information query
IPC分类:
