公开(公告)号：US20110189849A1

公开(公告)日：2011-08-04

申请号：US13087026

申请日：2011-04-14

申请人： Junichi KOIKE ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi KOIKE ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/768

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜，以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。

公开(公告)号：US20080057704A1

公开(公告)日：2008-03-06

申请号：US11877243

申请日：2007-10-23

申请人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜，以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。

公开(公告)号：US07943517B2

公开(公告)日：2011-05-17

申请号：US11877243

申请日：2007-10-23

申请人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。

公开(公告)号：US20050218519A1

公开(公告)日：2005-10-06

申请号：US11063876

申请日：2005-02-24

申请人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed between the interlevel insulating film and the interconnection main layer within the opening. The barrier film contains, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 半导体器件包括设置在半导体衬底上并具有形成在其中的开口的层间绝缘膜。 将包含Cu作为主要成分的互连主层嵌入开口部。 隔离膜介于开口内的层间绝缘膜和互连主层之间。 作为主要成分，阻挡膜含有具有层间绝缘膜的成分元素的预定金属元素的化合物。

公开(公告)号：US08133813B2

公开(公告)日：2012-03-13

申请号：US13087026

申请日：2011-04-14

申请人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜，以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。

公开(公告)号：US07304384B2

公开(公告)日：2007-12-04

申请号：US11063876

申请日：2005-02-24

申请人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed between the interlevel insulating film and the interconnection main layer within the opening. The barrier film contains, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 半导体器件包括设置在半导体衬底上并具有形成在其中的开口的层间绝缘膜。 将包含Cu作为主要成分的互连主层嵌入开口部。 隔离膜介于开口内的层间绝缘膜和互连主层之间。 作为主要成分，阻挡膜含有具有层间绝缘膜的成分元素的预定金属元素的化合物。

公开(公告)号：US07485915B2

公开(公告)日：2009-02-03

申请号：US11418467

申请日：2006-05-05

申请人： Hayato Nasu ,  Takamasa Usui ,  Hideki Shibata

发明人： Hayato Nasu ,  Takamasa Usui ,  Hideki Shibata

IPC分类号： H01L27/108 ,  H01L29/04 ,  H01L29/12 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L29/786 ,  H01L29/94 ,  H01L31/908 ,  H01L29/00 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L23/5223 ,  H01L21/76831 ,  H01L21/7687 ,  H01L23/53233 ,  H01L23/53238 ,  H01L28/75 ,  H01L28/91 ,  H01L2924/0002 ,  Y10S257/906 ,  Y10S257/908 ,  Y10S257/924 ,  H01L2924/00

摘要： A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode.

摘要翻译： 一种半导体器件包括电容器，该电容器包括至少包括第一绝缘膜的电容器绝缘膜和与第一绝缘膜接触形成的铁电膜，其包含预置金属元素的化合物和第一绝缘膜的构成元素， 主要成分，其介电常数大于第一绝缘膜的介电常数，由Cu中的一种和含有Cu作为主要成分的材料形成的第一电容器电极和形成为在电容器绝缘膜中配合的第二电容器电极 与第一电容器电极。

公开(公告)号：US20070004049A1

公开(公告)日：2007-01-04

申请号：US11476596

申请日：2006-06-29

申请人： Hayato Nasu ,  Takamasa Usui ,  Hideki Shibata

发明人： Hayato Nasu ,  Takamasa Usui ,  Hideki Shibata

IPC分类号： H01L21/00 ,  H01L29/94 ,  H01L21/4763

CPC分类号： H01L29/516 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/7881

摘要： A semiconductor device includes a gate insulating film which at least includes a first insulating film formed on the main surface of a semiconductor substrate and a first ferroelectric film formed on the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a gate electrode formed on the gate insulating film and containing one of Cu and a material containing Cu as a main component, and source and drain regions separately formed in the semiconductor substrate to sandwich the gate electrode.

摘要翻译： 半导体器件包括栅极绝缘膜，其至少包括形成在半导体衬底的主表面上的第一绝缘膜和形成在第一绝缘膜上的第一铁电膜，该第一绝缘膜包含预置金属元素的化合物和构成元素 所述第一绝缘膜作为主要成分并且介电常数大于所述第一绝缘膜的介电常数;门电极，形成在所述栅极绝缘膜上并且包含Cu和以Cu为主要成分的材料之一;以及源极和漏极 区域形成在半导体衬底中以夹着栅电极。

公开(公告)号：US20070012973A1

公开(公告)日：2007-01-18

申请号：US11418467

申请日：2006-05-05

申请人： Hayato Nasu ,  Takamasa Usui ,  Hideki Shibata

发明人： Hayato Nasu ,  Takamasa Usui ,  Hideki Shibata

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L23/5223 ,  H01L21/76831 ,  H01L21/7687 ,  H01L23/53233 ,  H01L23/53238 ,  H01L28/75 ,  H01L28/91 ,  H01L2924/0002 ,  Y10S257/906 ,  Y10S257/908 ,  Y10S257/924 ,  H01L2924/00

摘要： A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode.

摘要翻译： 一种半导体器件包括电容器，该电容器包括至少包括第一绝缘膜的电容器绝缘膜和与第一绝缘膜接触形成的铁电膜，其包含预置金属元素的化合物和第一绝缘膜的构成元素， 主要成分，其介电常数大于第一绝缘膜的介电常数，由Cu中的一种和含有Cu作为主要成分的材料形成的第一电容器电极和形成为在电容器绝缘膜中配合的第二电容器电极 与第一电容器电极。

公开(公告)号：US20070001307A1

公开(公告)日：2007-01-04

申请号：US11440453

申请日：2006-05-25

申请人： Takamasa Usui ,  Hayato Nasu ,  Hideki Shibata

发明人： Takamasa Usui ,  Hayato Nasu ,  Hideki Shibata

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L23/291 ,  H01L23/3178 ,  H01L23/5258 ,  H01L23/5286 ,  H01L23/53238 ,  H01L23/564 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05147 ,  H01L2224/05647 ,  H01L2224/05649 ,  H01L2224/48463 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01043 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/3011 ,  H01L2224/45099

摘要： A semiconductor device includes a guard ring formed in an inter-level insulating film on a semiconductor substrate to surround an element forming region on the semiconductor substrate and containing Cu as a main component. And the device further includes a first barrier film formed on an interface between the inter-level insulating film and the guard ring and containing a compound of a preset metal element and a constituent element of the inter-level insulating film as a main component.

摘要翻译： 半导体器件包括形成在半导体衬底上的层间绝缘膜中的保护环，以围绕半导体衬底上的元件形成区域并且以Cu为主要成分。 该装置还包括形成在层间绝缘膜和保护环之间的界面上的第一阻挡膜，并且包含预置金属元素和层间绝缘膜的构成元素的化合物作为主要成分。