发明申请
US20110193163A1 Semiconductor Devices with Improved Self-Aligned Contact Areas
有权
具有改进的自对准接触区域的半导体器件
- 专利标题: Semiconductor Devices with Improved Self-Aligned Contact Areas
- 专利标题(中): 具有改进的自对准接触区域的半导体器件
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申请号: US12702684申请日: 2010-02-09
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公开(公告)号: US20110193163A1公开(公告)日: 2011-08-11
- 发明人: Brent A. Anderson , Andres Bryant , Edward J. Nowak
- 申请人: Brent A. Anderson , Andres Bryant , Edward J. Nowak
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336
摘要:
A field effect device includes a channel region disposed on a silicon on insulator (SOI) layer, a gate portion disposed on the channel region, a source region disposed on the SOI layer and connected to the channel region having a horizontal surface and a vertical surface, the vertical surface arranged perpendicular to a linear axis of the device, a silicide portion that includes the horizontal surface and vertical surface of the source region, a contact including a metallic material in contact with the horizontal surface and vertical surface of the source region, and a drain region connected to the channel region disposed on the SOI layer.