发明申请
US20110198756A1 Organometallic Precursors and Related Intermediates for Deposition Processes, Their Production and Methods of Use
审中-公开
有机金属前体及相关中间体，用于沉积过程，其生产和使用方法
- 专利标题： Organometallic Precursors and Related Intermediates for Deposition Processes, Their Production and Methods of Use
- 专利标题（中）： 有机金属前体及相关中间体，用于沉积过程，其生产和使用方法
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申请号： US12067285申请日： 2006-08-25
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公开(公告)号： US20110198756A1公开(公告)日： 2011-08-18
- 发明人: ü Thenappan , Chien-Wei Li , David Nalewajek , Martin Cheney , Jingyu Lao , Eric Eisenbraun , Min Li , Nathaniel Berliner , Mikko Ritala , Markku Leskela , kaupo Kukli , Linda Cheney
- 申请人： ü Thenappan , Chien-Wei Li , David Nalewajek , Martin Cheney , Jingyu Lao , Eric Eisenbraun , Min Li , Nathaniel Berliner , Mikko Ritala , Markku Leskela , kaupo Kukli , Linda Cheney
- 国际申请： PCT/US06/33207 WO 20060825
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L29/43 ; H01L23/48
摘要：
Vapor deposition precursors that can deposit conformal thin ruthenium films on substrates with a very high growth rate, low resistivity and low levels of carbon, oxygen and nitrogen impurities have been provided. The precursors described herein include a compound having the formula CMC′, wherein M comprises a metal or a metalloid; C comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; and C′ comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; wherein at least one of C and C′ further and individually is substituted with a ligand represented by the formula CH(X)R1, wherein X is a N, P, or S-substituted functional group or hydroxyl, and R1 is hydrogen or a hydrocarbon. Methods of production of the vapor deposition precursors and the resulting films, and uses and end uses of the vapor deposition precursors and resulting films are also described.
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