发明申请
US20110212363A1 POWER STORAGE SYSTEM AND MANUFACTURING METHOD THEREFOR AND SECONDARY BATTERY AND CAPACITOR
审中-公开
电力储存系统及其二次电池和电容器的制造方法
- 专利标题: POWER STORAGE SYSTEM AND MANUFACTURING METHOD THEREFOR AND SECONDARY BATTERY AND CAPACITOR
- 专利标题(中): 电力储存系统及其二次电池和电容器的制造方法
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申请号: US13033877申请日: 2011-02-24
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公开(公告)号: US20110212363A1公开(公告)日: 2011-09-01
- 发明人: Shunpei YAMAZAKI , Tamae MORIWAKA , Kazutaka KURIKI , Mikio YUKAWA
- 申请人: Shunpei YAMAZAKI , Tamae MORIWAKA , Kazutaka KURIKI , Mikio YUKAWA
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2010-043562 20100226
- 主分类号: H01M10/26
- IPC分类号: H01M10/26 ; H01G9/00 ; H01M4/48 ; H01M4/505 ; H01G9/042 ; H01M4/26 ; B82Y99/00
摘要:
The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.
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