发明申请
US20110233386A1 SINGLE-ELECTRON DETECTION METHOD AND APPARATUS FOR SOLID-STATE INTENSITY IMAGE SENSORS
有权
用于固态强度图像传感器的单电子检测方法和装置
- 专利标题: SINGLE-ELECTRON DETECTION METHOD AND APPARATUS FOR SOLID-STATE INTENSITY IMAGE SENSORS
- 专利标题(中): 用于固态强度图像传感器的单电子检测方法和装置
-
申请号: US12730037申请日: 2010-03-23
-
公开(公告)号: US20110233386A1公开(公告)日: 2011-09-29
- 发明人: David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D. Rathman , Daniel R. Schuette , Brian F. Aull
- 申请人: David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D. Rathman , Daniel R. Schuette , Brian F. Aull
- 申请人地址: US MA Cambridge
- 专利权人: Massachusetts Institute of Technology
- 当前专利权人: Massachusetts Institute of Technology
- 当前专利权人地址: US MA Cambridge
- 主分类号: H01L27/148
- IPC分类号: H01L27/148 ; H01L31/18 ; H01L31/107
摘要:
Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.
公开/授权文献
信息查询
IPC分类: