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    SINGLE-ELECTRON DETECTION METHOD AND APPARATUS FOR SOLID-STATE INTENSITY IMAGE SENSORS
    1.
    发明申请
    SINGLE-ELECTRON DETECTION METHOD AND APPARATUS FOR SOLID-STATE INTENSITY IMAGE SENSORS 有权
    用于固态强度图像传感器的单电子检测方法和装置

    公开(公告)号：US20110233386A1

    公开(公告)日：2011-09-29

    申请号：US12730037

    申请日：2010-03-23

    申请人： David C. Shaver ,  Bernard B. Kosicki ,  Robert K. Reich ,  Dennis D. Rathman ,  Daniel R. Schuette ,  Brian F. Aull

    发明人： David C. Shaver ,  Bernard B. Kosicki ,  Robert K. Reich ,  Dennis D. Rathman ,  Daniel R. Schuette ,  Brian F. Aull

    IPC分类号： H01L27/148 ,  H01L31/18 ,  H01L31/107

    CPC分类号： H04N5/378 ,  H01L31/107 ,  H01L31/18 ,  H04N5/355 ,  H04N5/357 ,  H04N5/37213

    摘要： Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.

    摘要翻译： 本发明的实施例包括具有电荷耦合器件（CCD）寄存器的电子计数器，其被配置为将电子转移到可操作地耦合到CCD寄存器的输出的盖革模式雪崩二极管（GM-AD）阵列。 在高电荷电平下，非破坏性放大器检测CCD寄存器输出端的电荷，以提供电荷的模拟指示。 在低电荷水平下，无噪声的电荷分离器或仪表将电荷分成单电子分组，每个分组由GM-AD检测，提供数字输出，指示电子是否存在。 示例电子计数器特别适用于计数由大格式高速成像阵列产生的光电子，因为它们以高动态范围和高灵敏度运行。 因此，它们可以用于在各种各样的光照范围内拍摄场景。

    High-speed, high-sensitivity charge-coupled device with independent pixel control of charge collection and storage
    2.
    发明授权
    High-speed, high-sensitivity charge-coupled device with independent pixel control of charge collection and storage 有权
    高速，高灵敏度的电荷耦合器件，具有独立的像素控制电荷收集和存储

    公开(公告)号：US07091530B1

    公开(公告)日：2006-08-15

    申请号：US10612174

    申请日：2003-07-02

    申请人： Robert K. Reich ,  Bernard B. Kosicki ,  Jonathan C. Twichell ,  Barry E. Burke ,  Dennis D. Rathman

    发明人： Robert K. Reich ,  Bernard B. Kosicki ,  Jonathan C. Twichell ,  Barry E. Burke ,  Dennis D. Rathman

    IPC分类号： H01L27/148

    CPC分类号： H01L27/1485 ,  H01L27/1464 ,  H01L27/14812 ,  H01L31/035281

    摘要： A charge-coupled device imager including an array of super pixels disposed in a semiconductor substrate having a surface that is accessible to incident illumination. For each super pixel there is provided a plurality of subpixels which each correspond to one in the sequence of image frames. Each subpixel includes a doped photogenerated charge collection channel region opposite the illumination-accessible substrate surface, a charge collection channel region control electrode, doped charge drain regions adjacent to the channel region, a charge drain region control electrode, and a doped charge collection control region. To each subpixel are provided channel region and drain region control voltage connections, for independent collection and storage of photogenerated charge from the substrate at the charge collection channel region of a selected subpixel during one in the sequence of image frames and for drainage of photogenerated charge from the substrate to a drain region.

    摘要翻译： 一种电荷耦合器件成像器，其包括设置在半导体衬底中的超像素阵列，该半导体衬底具有可入射照明的表面。 对于每个超像素，提供多个子像素，每个子像素对应于图像帧序列中的一个。 每个子像素包括与照明可访问衬底表面相对的掺杂光生电荷收集通道区域，电荷收集通道区域控制电极，与沟道区相邻的掺杂电荷漏极区，电荷漏极区控制电极和掺杂电荷收集控制区 。 每个子像素都提供了沟道区域和漏极区域控制电压连接，用于在图像帧序列中的一个期间，从所选择的子像素的电荷收集通道区域处的基底在基底处独立收集和存储光生电荷，并且将光生电荷从 衬底到漏区。