发明申请
- 专利标题： SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 半导体基板
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申请号： US13073385申请日： 2011-03-28
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公开(公告)号： US20110233561A1公开(公告)日： 2011-09-29
- 发明人: Taro NISHIGUCHI , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
- 申请人： Taro NISHIGUCHI , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
- 申请人地址： JP Osaka-shi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2010-075719 20100329
- 主分类号： H01L29/161
- IPC分类号： H01L29/161
摘要：
A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween.
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