利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

382 条记录 (耗时 0.033 秒)

    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
    1.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 失效
    制造碳化硅基板的方法

    公开(公告)号：US20120009761A1

    公开(公告)日：2012-01-12

    申请号：US13256991

    申请日：2010-09-28

    申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    IPC分类号： H01L21/306 ,  H01L21/304

    CPC分类号： C30B29/36 ,  C30B33/06

    摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

    摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

    METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
    2.
    发明申请
    METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
    制造碳化硅基板的方法

    公开(公告)号：US20110306181A1

    公开(公告)日：2011-12-15

    申请号：US13202437

    申请日：2010-09-28

    申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

    发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

    IPC分类号： H01L21/762

    CPC分类号： H01L29/7802 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

    摘要： A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside.

    摘要翻译： 制造碳化硅衬底的方法包括以下步骤：制备由碳化硅形成的基底衬底和由单晶碳化硅形成的SiC衬底; 通过堆叠基底基板和SiC基板以使它们的主表面彼此接触来制造堆叠的基板; 加热堆叠的基板以连接基底基板和SiC基板，从而制造接合的基板; 并且加热接合的基板，使得在基底基板和SiC基板之间形成温度差，从而将在基底基板和SiC基板之间的界面处制造接合基板的步骤中形成的空隙排出到外部。

    Method for manufacturing silicon carbide substrate
    7.
    发明授权
    Method for manufacturing silicon carbide substrate 失效
    碳化硅基板的制造方法

    公开(公告)号：US08435866B2

    公开(公告)日：2013-05-07

    申请号：US13256991

    申请日：2010-09-28

    申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    IPC分类号： H01L21/306 ,  H01L21/304

    CPC分类号： C30B29/36 ,  C30B33/06

    摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

    摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

    METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
    8.
    发明申请
    METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
    用于制造碳化硅基板的方法和装置

    公开(公告)号：US20120184113A1

    公开(公告)日：2012-07-19

    申请号：US13395793

    申请日：2011-01-07

    申请人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

    发明人： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

    IPC分类号： H01L21/30 ,  H05B3/02

    CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02667 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/66068

    摘要： A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently.

    摘要翻译： 执行制备叠层的步骤，将第一单晶衬底组和第一衬底中的每个单晶衬底彼此面对，将每个单晶衬底放置在第二单晶衬底组中， 第二基板彼此面对，并且在一个方向上依次堆叠第一单晶基板组，第一基板，插入部，第二单晶基板组和第二基板。 接下来，对叠层进行加热，以使堆叠的温度达到碳化硅可以升华的温度，并且在上述方向上随着温度升高而在叠层中形成温度梯度。 以这种方式，可以有效地制造碳化硅衬底。

    SEMICONDUCTOR SUBSTRATE
    9.
    发明申请
    SEMICONDUCTOR SUBSTRATE 审中-公开
    半导体基板

    公开(公告)号：US20110233561A1

    公开(公告)日：2011-09-29

    申请号：US13073385

    申请日：2011-03-28

    申请人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

    发明人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

    IPC分类号： H01L29/161

    CPC分类号： H01L29/7802 ,  H01L21/0445 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66068

    摘要： A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween.

    摘要翻译： 支撑部分由碳化硅制成。 至少一层具有第一和第二表面。 第一表面由支撑部分支撑。 所述至少一层具有第一和第二区域。 第一区域由单晶结构的碳化硅制成。 第二区域由石墨制成。 第二表面具有由第一区域形成的表面。 第一表面具有由第一区域形成的表面和由第二区域形成的表面。 以这种方式，可以提供具有由具有单晶结构的碳化硅制成的区域和由碳化硅制成的支撑部分的区域并且允许其之间的界面的电阻降低的半导体衬底。