Invention Application
US20110233655A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE
有权
用于制造半导体存储器件的半导体存储器件和方法
- Patent Title: SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE
- Patent Title (中): 用于制造半导体存储器件的半导体存储器件和方法
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Application No.: US12880711Application Date: 2010-09-13
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Publication No.: US20110233655A1Publication Date: 2011-09-29
- Inventor: Tatsuo SHIMIZU , Atsuhiro KINOSHITA
- Applicant: Tatsuo SHIMIZU , Atsuhiro KINOSHITA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Priority: JP2010-073699 20100326
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/28
Abstract:
According to one embodiment, in a semiconductor memory device, a source region and a drain region are disposed away from each other in the semiconductor layer. A tunnel insulating film is formed between the source region and the drain region on the semiconductor layer. A charge accumulating film includes an oxide cluster and is formed on the tunnel insulating film. A block insulating film is formed on the charge accumulating film. A gate electrode is formed on the block insulating film. The oxide cluster includes either Zr or Hf, and further contains at least one element selected from Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Ta, W, Re, Os, Ir, Pt, Au and Hg.
Public/Granted literature
- US08436417B2 Oxide cluster semiconductor memory device Public/Granted day:2013-05-07
Information query
IPC分类:
