发明申请
- 专利标题： SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, METHOD OF DESIGNING SEMICONDUCTOR APPARATUS, AND ELECTRONIC APPARATUS
- 专利标题（中）： 半导体装置，制造半导体装置的方法，设计半导体装置的方法和电子装置
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申请号： US13050338申请日： 2011-03-17
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公开(公告)号： US20110233702A1公开(公告)日： 2011-09-29
- 发明人: Hiroshi Takahashi , Shunichi Sukegawa , Keishi Inoue
- 申请人： Hiroshi Takahashi , Shunichi Sukegawa , Keishi Inoue
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2010-070925 20100325
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; H01L31/18 ; H01L27/14
摘要：
A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.
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