发明申请
- 专利标题: DUAL SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUCTURE
- 专利标题(中): 用于保护图案结构的双面隔板
-
申请号: US12751891申请日: 2010-03-31
-
公开(公告)号: US20110241085A1公开(公告)日: 2011-10-06
- 发明人: David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A. Conti
- 申请人: David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A. Conti
- 申请人地址: JP Tokyo US NY Armonk
- 专利权人: TOKYO ELECTRON LIMITED,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: TOKYO ELECTRON LIMITED,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: JP Tokyo US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/311
摘要:
A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.