公开(公告)号：US20060115590A1

公开(公告)日：2006-06-01

申请号：US10998394

申请日：2004-11-29

申请人： Kenji Suzuki ,  Gerrit Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Kenji Suzuki ,  Gerrit Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/00

CPC分类号： C23C16/16 ,  C23C16/4405 ,  C23C16/4481 ,  C23C16/4485

摘要： A method for depositing metal layers, such as Ruthenium, on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system, and depositing a metal layer from the metal carbonyl on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In the deposition system, the metal carbonyl is evaporated in a solid precursor evaporation system, and the precursor vapor is transported to the process chamber via a vapor delivery system. Further, an in-situ cleaning system is coupled to the vapor delivery system in order to perform periodic cleaning of the deposition system. Periodic in-situ cleaning permits achieving a greater deposition rate by operating the deposition system at higher temperature where precursor vapor can decompose and potentially deposit on surfaces of the deposition system.

摘要翻译： 通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积诸如钌的金属层的方法包括在沉积系统中引入金属羰基前体，并在基底上沉积金属羰基金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。 在沉积系统中，金属羰基在固体前驱体蒸发系统中蒸发，并且前体蒸气通过蒸气输送系统输送到处理室。 此外，原位清洁系统耦合到蒸气输送系统，以便对沉积系统进行定期清洁。 定期原位清洗允许通过在较高温度下操作沉积系统来实现更高的沉积速率，其中前体蒸气可以分解并潜在地沉积在沉积系统的表面上。