摘要:
A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.
摘要:
A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.
摘要:
A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.
摘要:
A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.
摘要:
A method of patterning a substrate. A sacrificial film is formed over a substrate and a pattern created therein. A first spacer layer is conformally deposited over the patterned sacrificial film and at least one horizontal portion of the first spacer layer is removed while vertical portions of the first spacer layer remain. A second spacer layer is conformally deposited over the patterned sacrificial film and the remaining portions of the first spacer layer. At least one horizontal portion of the second spacer layer is removed while vertical portions of the second spacer layer remain. Conformal deposition of the first and second spacer layers is optionally repeated one or more times. Conformal deposition of the first layer is optionally repeated. Then, one of the first or second spacer layers is removed while substantially leaving the vertical portions of the remaining one of the first or second spacer layers.
摘要:
A method of patterning a substrate. A sacrificial film is formed over a substrate and a pattern created therein. A first spacer layer is conformally deposited over the patterned sacrificial film and at least one horizontal portion of the first spacer layer is removed while vertical portions of the first spacer layer remain. A second spacer layer is conformally deposited over the patterned sacrificial film and the remaining portions of the first spacer layer. At least one horizontal portion of the second spacer layer is removed while vertical portions of the second spacer layer remain. Conformal deposition of the first and second spacer layers is optionally repeated one or more times. Conformal deposition of the first layer is optionally repeated. Then, one of the first or second spacer layers is removed while substantially leaving the vertical portions of the remaining one of the first or second spacer layers.
摘要:
During pattern transfer to a film stack, the hard mask layer, such as a tunable etch resistant antireflective coating (TERA), is consumed when etching the underling layer(s), leading to reduced etch performance and potential damage to the underlying layer(s), such as lack of profile control. A method of and system for preparing a structure on a substrate is described comprising: preparing a film stack comprising a thin film, a hard mask formed on the thin film, and a layer of light-sensitive material formed on the hardmask; forming a pattern in the layer of light-sensitive material; transferring the pattern to the hard mask; removing the layer of light-sensitive material; treating the surface layer of the hard mask in order to modify the surface; and transferring the pattern to the thin film.
摘要:
An apparatus and method are provided for replacing parts in a vacuum chamber without venting the vacuum. A transfer system is used to transfer a removably mounted component from a processing module that is attached to a transfer system and replacing the component with another component from a maintenance system that is connected through an isolation assembly to a transfer module. The maintenance system may include a supply of replacement parts and receive expended or otherwise serviceable items that are to be replaced. These serviceable items may include chamber component that has a tendency to degrade during processes being performed in the processing module. Typically, such items are etched or eroded away or accumulate coatings, requiring occasional removal and replacement. Focus rings, chamber shields, dark space shields, insulators, deposition baffles and adaptors are some of the items requiring periodic replacement. Such items are installed in the process module in a way that permits their removal and replacement by a transfer arm or other transfer mechanism of the transfer system or otherwise by robotic mechanisms. The processing module may be an etching, deposition, ALD, patterning, developing, metrology, thermal processing, cleaning or other module used in a vacuum process, particularly for processing of semiconductor wafers.
摘要:
A processing system and method for chemically treating a TERA layer on a substrate. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate. In one embodiment, the system for processing a TERA layer includes a plasma-enhanced chemical vapor deposition (PECVD) system for depositing the TERA layer on the substrate, an etching system for creating features in the TERA layer, and a processing subsystem for reducing the size of the features in the TERA layer.
摘要:
A processing system and method for chemically treating a TERA layer on a substrate. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate. In one embodiment, the system for processing a TERA layer includes a plasma-enhanced chemical vapor deposition (PECVD) system for depositing the TERA layer on the substrate, an etching system for creating features in the TERA layer, and a processing subsystem for reducing the size of the features in the TERA layer.