发明申请
- 专利标题: METHOD FOR MAKING BURIED CIRCUMFERENTIAL ELECTRODE MICROCAVITY PLASMA DEVICE ARRAYS, AND ELECTRICAL INTERCONNECTS
- 专利标题(中): 烧结电路微电子等离子体装置阵列和电气互连的方法
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申请号: US13188712申请日: 2011-07-22
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公开(公告)号: US20110275272A1公开(公告)日: 2011-11-10
- 发明人: J. Gary Eden , Sung-Jin Park , Kwang-Soo Kim
- 申请人: J. Gary Eden , Sung-Jin Park , Kwang-Soo Kim
- 申请人地址: US IL Urbana
- 专利权人: The Board of Trustees of the University of Illinois
- 当前专利权人: The Board of Trustees of the University of Illinois
- 当前专利权人地址: US IL Urbana
- 主分类号: H01J9/02
- IPC分类号: H01J9/02
摘要:
In a preferred method of formation embodiment, a metal foil or film is obtained or formed with micro-holes. The foil is anodized to form metal oxide. One or more self-patterned metal electrodes are automatically formed and buried in the metal oxide created by the anodization process. The electrodes form in a closed circumference around each microcavity in a plane(s) transverse to the microcavity axis, and can be electrically isolated or connected. Preferred embodiments provide inexpensive microplasma device electrode structures and a fabrication method for realizing microplasma arrays that are lightweight and scalable to large areas. Electrodes buried in metal oxide and complex patterns of electrodes can also be formed without reference to microplasma devices—that is, for general electrical circuitry.
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