发明申请
US20110284884A1 LIGHT EMITTING DIODE CHIP FOR HIGH VOLTAGE OPERATION AND LIGHT EMITTING DIODE PACKAGE INCLUDING THE SAME
有权
用于高电压操作的发光二极管芯片和包括其的发光二极管封装
- 专利标题: LIGHT EMITTING DIODE CHIP FOR HIGH VOLTAGE OPERATION AND LIGHT EMITTING DIODE PACKAGE INCLUDING THE SAME
- 专利标题(中): 用于高电压操作的发光二极管芯片和包括其的发光二极管封装
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申请号: US13146073申请日: 2010-02-12
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公开(公告)号: US20110284884A1公开(公告)日: 2011-11-24
- 发明人: Chung Hoon Lee , Won Cheol Seo , Yeo Jin Yoon , Jin Cheol Shin
- 申请人: Chung Hoon Lee , Won Cheol Seo , Yeo Jin Yoon , Jin Cheol Shin
- 申请人地址: KR Seoul
- 专利权人: SEOUL SEMICONDUCTOR CO., LTD.
- 当前专利权人: SEOUL SEMICONDUCTOR CO., LTD.
- 当前专利权人地址: KR Seoul
- 优先权: KR10-2009-0011325 20090212
- 国际申请: PCT/KR10/00892 WO 20100212
- 主分类号: H01L33/62
- IPC分类号: H01L33/62 ; H01L33/50
摘要:
A light emitting diode (LED) chip for high voltage operation and an LED package including the same arc disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.
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