公开(公告)号：US09847371B2

公开(公告)日：2017-12-19

申请号：US13146073

申请日：2010-02-12

申请人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

发明人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

IPC分类号： H01L27/15 ,  H01L33/62 ,  H01L33/50 ,  H05B33/08

CPC分类号： H01L27/153 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H05B33/0821 ,  H01L2924/00014

摘要： A light emitting diode (LED) chip for high voltage operation and an LED package including the same are disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.

公开(公告)号：US20110284884A1

公开(公告)日：2011-11-24

申请号：US13146073

申请日：2010-02-12

申请人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

发明人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

IPC分类号： H01L33/62 ,  H01L33/50

CPC分类号： H01L27/153 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H05B33/0821 ,  H01L2924/00014

摘要： A light emitting diode (LED) chip for high voltage operation and an LED package including the same arc disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.

摘要翻译： 一种用于高电压操作的发光二极管（LED）芯片和包含相同电弧的LED封装。 LED芯片包括基板，形成在基板上并包括串联连接的n个发光单元的第一阵列和形成在基板上的第二阵列，并且包括串联连接的m（m和n个; n）个发光单元。 在LED芯片的操作期间，第一阵列和第二阵列通过彼此反向并联连接来操作。 此外，当第一阵列的驱动电压被定义为Vd1并且第二阵列的驱动电压被定义为Vd2时，Vd1和Vd2×（n / m）之间的差不大于2V。

公开(公告)号：US08232565B2

公开(公告)日：2012-07-31

申请号：US12607644

申请日：2009-10-28

申请人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

发明人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/48 ,  H05B33/0821

摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

摘要翻译： 本发明公开了一种发光二极管（LED），其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元，每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元，每个包括至少一个发光单元，每个全波发光单元包括分别在其两端形成的第三和第四端子。 每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子 波发光单元。 此外，第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间，并且第二半波发光单元 串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。

公开(公告)号：US08188489B2

公开(公告)日：2012-05-29

申请号：US12607506

申请日：2009-10-28

申请人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

发明人： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/48 ,  H05B33/0821

摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

公开(公告)号：US20150034979A1

公开(公告)日：2015-02-05

申请号：US14123393

申请日：2012-05-25

申请人： Chung Hoon Lee ,  Dae Sung Kal ,  Won Cheol Seo ,  Young Eun Yang

发明人： Chung Hoon Lee ,  Dae Sung Kal ,  Won Cheol Seo ,  Young Eun Yang

IPC分类号： H01L33/64 ,  H01L27/15

CPC分类号： H01L33/64 ,  F21K9/23 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed is a light emitting diode assembly. The light emitting diode assembly comprised: a red light emitting diode chip; a short-wavelength light emitting diode chip emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member for dispersing most of the heat generated in the short wavelength light emitting diode chip; and a second heat-dispersion member for dispersing most of the heat generated in the red light emitting diode chip. Further, the second heat-dispersion member has heat dispersion performance relatively superior to that of the first heat dispersion member. Thus, spectrum movement in the red light emitted from the red light emitting diode chip may be prevented so as to prevent a color-coordinate transformation during the operation time of same.

摘要翻译： 公开了一种发光二极管组件。 发光二极管组件包括：红色发光二极管芯片; 发射波长比从红色发光二极管芯片发射的光的波长相对更短的光的短波长发光二极管芯片; 用于分散在短波长发光二极管芯片中产生的大部分热量的第一散热构件; 以及用于分散红色发光二极管芯片中产生的大部分热量的第二散热构件。 此外，第二散热构件的散热性能比第一散热构件的热分散性能要好。 因此，可以防止从红色发光二极管芯片发射的红色光中的光谱运动，以防止在操作时间相同的色坐标变换。

公开(公告)号：US20130026498A1

公开(公告)日：2013-01-31

申请号：US13640943

申请日：2011-04-07

申请人： Chung Hoon Lee ,  Kyung Hee Ye ,  Dae Sung Kal ,  Won Cheol Seo

发明人： Chung Hoon Lee ,  Kyung Hee Ye ,  Dae Sung Kal ,  Won Cheol Seo

IPC分类号： H01L33/48 ,  B32B9/04 ,  B32B7/02 ,  B32B15/04

CPC分类号： H01L33/0079 ,  Y10T428/24942

摘要： A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.

摘要翻译： 公开了一种其上形成有第一导电型半导体层，有源层和第二导电型半导体层的衬底组件，该衬底组件包括第一衬底，第二衬底和介于其间的结合层。 在基板组件中，接合层的热膨胀系数小于或等于第一和第二基板中的至少一个的热膨胀系数。

公开(公告)号：US08912551B2

公开(公告)日：2014-12-16

申请号：US13640943

申请日：2011-04-07

申请人： Chung Hoon Lee ,  Kyung Hee Ye ,  Dae Sung Cho ,  Won Cheol Seo

发明人： Chung Hoon Lee ,  Kyung Hee Ye ,  Dae Sung Cho ,  Won Cheol Seo

IPC分类号： H01L33/48 ,  H01L33/00

CPC分类号： H01L33/0079 ,  Y10T428/24942

摘要： A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.

摘要翻译： 公开了一种其上形成有第一导电型半导体层，有源层和第二导电型半导体层的衬底组件，该衬底组件包括第一衬底，第二衬底和介于其间的结合层。 在基板组件中，接合层的热膨胀系数小于或等于第一和第二基板中的至少一个的热膨胀系数。

公开(公告)号：US08810124B2

公开(公告)日：2014-08-19

申请号：US12581507

申请日：2009-10-19

申请人： Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

发明人： Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC分类号： H05B33/14 ,  H05B33/08 ,  F21K99/00 ,  H01L25/075 ,  H01L33/50 ,  F21Y113/00

CPC分类号： H01L33/504 ,  F21K9/00 ,  F21K9/62 ,  F21K9/64 ,  F21V23/06 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48137 ,  H01L2224/49107 ,  H05B33/0821

摘要： Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated.

摘要翻译： 公开了具有长持久性荧光体和具有该荧光体的AC发光器件模块的交流发光器件。 根据本发明的示例性实施例，发光器件包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。 此外，第一长持续荧光体位于第一发光二极管芯片上，以对从第一发光二极管芯片发射的光的一部分进行波长转换; 并且第二长持续荧光体位于第二发光二极管芯片上，以对从第二发光二极管芯片发射的光的一部分进行波长转换。 使得由第二长持续荧光体产生的余辉发光与第一长持续荧光体不同，从而可以进一步减轻AC发光器件的闪烁效应。

公开(公告)号：US09203007B2

公开(公告)日：2015-12-01

申请号：US14123393

申请日：2012-05-25

申请人： Chung Hoon Lee ,  Dae Sung Kal ,  Won Cheol Seo ,  Young Eun Yang

发明人： Chung Hoon Lee ,  Dae Sung Kal ,  Won Cheol Seo ,  Young Eun Yang

IPC分类号： H01L33/64 ,  H01L27/15 ,  H01L25/075 ,  F21K99/00

CPC分类号： H01L33/64 ,  F21K9/23 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed is a light emitting diode assembly. The light emitting diode assembly comprised: a red light emitting diode chip; a short-wavelength light emitting diode chip emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member for dispersing most of the heat generated in the short wavelength light emitting diode chip; and a second heat-dispersion member for dispersing most of the heat generated in the red light emitting diode chip. Further, the second heat-dispersion member has heat dispersion performance relatively superior to that of the first heat dispersion member. Thus, spectrum movement in the red light emitted from the red light emitting diode chip may be prevented so as to prevent a color-coordinate transformation during the operation time of same.

摘要翻译： 公开了一种发光二极管组件。 发光二极管组件包括：红色发光二极管芯片; 发射波长比从红色发光二极管芯片发射的光的波长相对更短的光的短波长发光二极管芯片; 用于分散在短波长发光二极管芯片中产生的大部分热量的第一散热构件; 以及用于分散红色发光二极管芯片中产生的大部分热量的第二散热构件。 此外，第二散热构件的散热性能比第一散热构件的热分散性能要好。 因此，可以防止从红色发光二极管芯片发射的红色光中的光谱运动，以防止在操作时间相同的色坐标变换。

公开(公告)号：US08907360B2

公开(公告)日：2014-12-09

申请号：US12917937

申请日：2010-11-02

申请人： Chung Hoon Lee ,  Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee

发明人： Chung Hoon Lee ,  Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee

IPC分类号： H01L33/00 ,  H01L33/46 ,  H01L33/60

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

摘要翻译： 本发明的一个示例性实施例公开了一种发光二极管芯片，其包括基板，布置在基板上的发光结构，发光结构包括布置在第一导电型半导体层和第二导电型半导体之间的有源层 层和分布布拉格反射器以反射从发光结构发射的光。 分布布拉格反射器对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。