发明申请
- 专利标题： ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM
- 专利标题（中）： 超高选择性的硬掩膜
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申请号： US12784341申请日： 2010-05-20
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公开(公告)号： US20110287633A1公开(公告)日： 2011-11-24
- 发明人: Kwangduk Douglas Lee , Martin Jay Seamons , Sudha Rathi , Chiu Chan , Michael H. Lin
- 申请人： Kwangduk Douglas Lee , Martin Jay Seamons , Sudha Rathi , Chiu Chan , Michael H. Lin
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/312
摘要：
A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.
公开/授权文献
- US08361906B2 Ultra high selectivity ashable hard mask film 公开/授权日：2013-01-29
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