发明申请
US20110302352A1 Memory system and method of accessing a semiconductor memory device
有权
用于访问半导体存储器件的存储器系统和方法
- 专利标题： Memory system and method of accessing a semiconductor memory device
- 专利标题（中）： 用于访问半导体存储器件的存储器系统和方法
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申请号： US13137423申请日： 2011-08-15
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公开(公告)号： US20110302352A1公开(公告)日： 2011-12-08
- 发明人: Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
- 申请人： Jaesoo Lee , Kangho Roh , Wonhee Cho , Hojun Shim , Youngjoon Choi , Jaehoon Heo , Je-Hyuck Song , Seung-Duk Cho , Seontaek Kim , Moonwook Oh , Jong Tae Park , Wonmoon Cheon , Chanik Park , Yang-sup Lee
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2008-0055637 20080613; KR10-2008-0055639 20080613; KR10-2008-0055641 20080613; KR10-2008-0055642 20080613; KR10-2008-0055643 20080613; KR10-2008-0056871 20080617; KR10-2008-0061001 20080626
- 主分类号： G06F12/02
- IPC分类号： G06F12/02
摘要：
A memory system is provided with a processor, a main memory, and a flash memory. Performance of the memory system is improved through achievement of speed-up and high data reliability. The memory system includes a nonvolatile memory device and a controller configured to drive a control program to control the nonvolatile memory device. The control program executes a second access operation for the nonvolatile memory device even before a first access operation to the nonvolatile memory device is completed.
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