Invention Application
- Patent Title: Copper Bump Structures Having Sidewall Protection Layers
- Patent Title (中): 具有侧壁保护层的铜凸块结构
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Application No.: US12846260Application Date: 2010-07-29
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Publication No.: US20110304042A1Publication Date: 2011-12-15
- Inventor: Jing-Cheng Lin , Ya-Hsi Hwung , Hsin-Yu Chen , Po-Hao Tsai , Yan-Fu Lin , Cheng-Lin Huang , Fang Wen Tsai , Wen-Chih Chiou
- Applicant: Jing-Cheng Lin , Ya-Hsi Hwung , Hsin-Yu Chen , Po-Hao Tsai , Yan-Fu Lin , Cheng-Lin Huang , Fang Wen Tsai , Wen-Chih Chiou
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/768
Abstract:
A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.
Public/Granted literature
- US08922004B2 Copper bump structures having sidewall protection layers Public/Granted day:2014-12-30
Information query
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