专利检索 ap:"Yan-Fu Lin" 第 1 页

1.

发明授权
Semiconductor device cover mark 有权
标题翻译：半导体器件盖标记

公开(公告)号：US08629568B2

公开(公告)日：2014-01-14

申请号：US12847802

申请日：2010-07-30

申请人： Yan-Fu Lin , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu

发明人： Yan-Fu Lin , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu

IPC分类号： H01L23/544 , H01L21/76

CPC分类号： H01L21/563 , H01L23/49838 , H01L23/544 , H01L24/11 , H01L24/81 , H01L2223/54413 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2223/5448 , H01L2223/54486 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11462 , H01L2224/11849 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/81815 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/351 , H01L2924/00014 , H01L2224/13099 , H01L2924/00

摘要： A system and method for determining underfill expansion is provided. An embodiment comprises forming cover marks along a top surface of a substrate, attaching a semiconductor substrate to the top surface of the substrate, placing an underfill material between the semiconductor substrate and the substrate, and then using the cover marks to determine the expansion of the underfill over the top surface of the substrate. Additionally, cover marks may also be formed along a top surface of the semiconductor substrate, and the cover marks on both the substrate and the semiconductor substrate may be used together as alignment marks during the alignment of the substrate and the semiconductor substrate.

摘要翻译： 提供了一种用于确定底部填充膨胀的系统和方法。一个实施例包括沿着衬底的顶表面形成覆盖标记，将半导体衬底附接到衬底的顶表面，将底部填充材料放置在半导体衬底和衬底之间，然后使用覆盖标记来确定底部填充在基材的顶表面上。此外，也可以沿着半导体衬底的顶表面形成覆盖标记，并且衬底和半导体衬底上的覆盖标记可以在衬底和半导体衬底的对准期间一起用作对准标记。

2.

发明申请
Copper Bump Structures Having Sidewall Protection Layers 有权
标题翻译：具有侧壁保护层的铜凸块结构

公开(公告)号：US20110304042A1

公开(公告)日：2011-12-15

申请号：US12846260

申请日：2010-07-29

申请人： Jing-Cheng Lin , Ya-Hsi Hwung , Hsin-Yu Chen , Po-Hao Tsai , Yan-Fu Lin , Cheng-Lin Huang , Fang Wen Tsai , Wen-Chih Chiou

发明人： Jing-Cheng Lin , Ya-Hsi Hwung , Hsin-Yu Chen , Po-Hao Tsai , Yan-Fu Lin , Cheng-Lin Huang , Fang Wen Tsai , Wen-Chih Chiou

IPC分类号： H01L23/498 , H01L21/768

CPC分类号： H01L24/11 , H01L23/488 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05099 , H01L2224/05571 , H01L2224/05599 , H01L2224/10126 , H01L2224/10145 , H01L2224/1182 , H01L2224/11823 , H01L2224/1191 , H01L2224/13017 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/13578 , H01L2224/13583 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2224/1369 , H01L2224/16058 , H01L2224/16148 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/81193 , H01L2224/81801 , H01L2224/81815 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/0002 , H01L2924/01029 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/37001 , H01L2924/00 , H01L2224/81 , H01L2224/16225 , H01L2924/00012 , H01L2224/16145 , H01L2924/00014 , H01L2924/01047 , H01L2224/05552 , H01L2224/81805

摘要： A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.

摘要翻译： 工件包括具有顶表面和侧壁的铜凸块。在铜凸块的侧壁而不是顶表面上形成保护层。保护层包括铜和聚合物的化合物，并且是介电层。

3.

发明申请
Semiconductor Device Cover Mark 有权
标题翻译：半导体器件封面

公开(公告)号：US20120025368A1

公开(公告)日：2012-02-02

申请号：US12847802

申请日：2010-07-30

申请人： Yan-Fu Lin , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu

发明人： Yan-Fu Lin , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu

IPC分类号： H01L23/544 , H01L21/56 , H01L23/498

CPC分类号： H01L21/563 , H01L23/49838 , H01L23/544 , H01L24/11 , H01L24/81 , H01L2223/54413 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2223/5448 , H01L2223/54486 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11462 , H01L2224/11849 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/81815 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/351 , H01L2924/00014 , H01L2224/13099 , H01L2924/00

摘要： A system and method for determining underfill expansion is provided. An embodiment comprises forming cover marks along a top surface of a substrate, attaching a semiconductor substrate to the top surface of the substrate, placing an underfill material between the semiconductor substrate and the substrate, and then using the cover marks to determine the expansion of the underfill over the top surface of the substrate. Additionally, cover marks may also be formed along a top surface of the semiconductor substrate, and the cover marks on both the substrate and the semiconductor substrate may be used together as alignment marks during the alignment of the substrate and the semiconductor substrate.

摘要翻译： 提供了一种用于确定底部填充膨胀的系统和方法。一个实施例包括沿着衬底的顶表面形成覆盖标记，将半导体衬底附接到衬底的顶表面，将底部填充材料放置在半导体衬底和衬底之间，然后使用覆盖标记来确定底部填充在基材的顶表面上。此外，也可以沿着半导体衬底的顶表面形成覆盖标记，并且衬底和半导体衬底上的覆盖标记可以在衬底和半导体衬底的对准期间一起用作对准标记。