发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13141332申请日： 2009-11-25
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公开(公告)号： US20110309467A1公开(公告)日： 2011-12-22
- 发明人: Shin Matsumoto , Yutaka Takafuji , Yasumori Fukushima , Kazuhide Tomiyasu , Kenshi Tada
- 申请人： Shin Matsumoto , Yutaka Takafuji , Yasumori Fukushima , Kazuhide Tomiyasu , Kenshi Tada
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2009-055245 20090309
- 国际申请： PCT/JP2009/006343 WO 20091125
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/762
摘要：
Disclosed is a semiconductor device including a substrate for bonding (10a), and a semiconductor element part (25aa) which is bonded to the substrate (10a), and in which an element pattern (T) is formed, wherein in a bonded interface between the substrate (10a) and the semiconductor element part (25aa), recessed portions (23a) are formed in at least one of the substrate (10a) and the semiconductor element part (25aa).
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