Invention Application
- Patent Title: TSV Formation Processes Using TSV-Last Approach
- Patent Title (中): 使用TSV最后方法的TSV形成过程
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Application No.: US12834304Application Date: 2010-07-12
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Publication No.: US20120007154A1Publication Date: 2012-01-12
- Inventor: Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
- Applicant: Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/06 ; H01L21/768 ; H01L29/78
Abstract:
A device includes a semiconductor substrate having a front surface and a back surface opposite the front surface. An insulation region extends from the front surface into the semiconductor substrate. An inter-layer dielectric (ILD) is over the insulation region. A landing pad extends from a top surface of the ILD into the insulation region. A through-substrate via (TSV) extends from the back surface of the semiconductor substrate to the landing pad.
Public/Granted literature
- US08338939B2 TSV formation processes using TSV-last approach Public/Granted day:2012-12-25
Information query
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