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公开(公告)号：US20120007154A1
公开(公告)日：2012-01-12
申请号：US12834304
申请日：2010-07-12
申请人： Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
发明人： Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
IPC分类号： H01L23/48 , H01L29/06 , H01L21/768 , H01L29/78
CPC分类号： H01L21/76898 , H01L21/30604 , H01L21/31111 , H01L21/762 , H01L21/76802 , H01L21/76831 , H01L21/76877 , H01L21/823475 , H01L21/823481 , H01L23/481 , H01L24/11 , H01L29/78 , H01L2224/131 , H01L2924/01029 , H01L2924/00014
摘要： A device includes a semiconductor substrate having a front surface and a back surface opposite the front surface. An insulation region extends from the front surface into the semiconductor substrate. An inter-layer dielectric (ILD) is over the insulation region. A landing pad extends from a top surface of the ILD into the insulation region. A through-substrate via (TSV) extends from the back surface of the semiconductor substrate to the landing pad.
摘要翻译： 一种器件包括具有与前表面相对的前表面和后表面的半导体衬底。 绝缘区域从前表面延伸到半导体衬底中。 层间电介质（ILD）在绝缘区域之上。 着陆垫从ILD的顶表面延伸到绝缘区域中。 贯穿基板通孔（TSV）从半导体基板的背面延伸到着陆焊盘。
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公开(公告)号：US08338939B2
公开(公告)日：2012-12-25
申请号：US12834304
申请日：2010-07-12
申请人： Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
发明人： Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L21/30604 , H01L21/31111 , H01L21/762 , H01L21/76802 , H01L21/76831 , H01L21/76877 , H01L21/823475 , H01L21/823481 , H01L23/481 , H01L24/11 , H01L29/78 , H01L2224/131 , H01L2924/01029 , H01L2924/00014
摘要： A device includes a semiconductor substrate having a front surface and a back surface opposite the front surface. An insulation region extends from the front surface into the semiconductor substrate. An inter-layer dielectric (ILD) is over the insulation region. A landing pad extends from a top surface of the ILD into the insulation region. A through-substrate via (TSV) extends from the back surface of the semiconductor substrate to the landing pad.
摘要翻译： 一种器件包括具有与前表面相对的前表面和后表面的半导体衬底。 绝缘区域从前表面延伸到半导体衬底中。 层间电介质（ILD）在绝缘区域之上。 着陆垫从ILD的顶表面延伸到绝缘区域中。 贯穿基板通孔（TSV）从半导体基板的背面延伸到着陆焊盘。
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公开(公告)号：US08803316B2
公开(公告)日：2014-08-12
申请号：US13311692
申请日：2011-12-06
申请人： Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
发明人： Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
IPC分类号： H01L23/48
CPC分类号： H01L23/49827 , H01L21/76879 , H01L21/76885 , H01L21/76898 , H01L23/481 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05556 , H01L2224/05558 , H01L2224/0557 , H01L2224/11011 , H01L2224/13025 , H01L2224/131 , H01L2224/1405 , H01L2224/14104 , H01L2224/73204 , H01L2924/01028 , H01L2924/0132 , H01L2924/067 , H01L2924/0705 , H01L2924/181 , H01L2924/00 , H01L2924/014 , H01L2924/00012
摘要： A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
摘要翻译： 一种器件包括具有正面和背面的衬底，从衬底的背面延伸到前侧的通孔，以及位于衬底的背面和通孔上方的导电焊盘。 导电垫具有基本平坦的顶表面。 导电凸块在基本上平坦的顶表面上方具有非平面的顶表面，并且与通孔对准。 导电凸块和导电垫由相同的材料形成。 在导电凸块和导电垫之间不形成界面。
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公开(公告)号：US20130140690A1
公开(公告)日：2013-06-06
申请号：US13311692
申请日：2011-12-06
申请人： Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
发明人： Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L23/49827 , H01L21/76879 , H01L21/76885 , H01L21/76898 , H01L23/481 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05556 , H01L2224/05558 , H01L2224/0557 , H01L2224/11011 , H01L2224/13025 , H01L2224/131 , H01L2224/1405 , H01L2224/14104 , H01L2224/73204 , H01L2924/01028 , H01L2924/0132 , H01L2924/067 , H01L2924/0705 , H01L2924/181 , H01L2924/00 , H01L2924/014 , H01L2924/00012
摘要： A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
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公开(公告)号：US20110309647A1
公开(公告)日：2011-12-22
申请号：US12818022
申请日：2010-06-17
申请人： Ku-Feng Yang , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ku-Feng Yang , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Chen-Hua Yu
CPC分类号： H01L21/67346 , H01L21/6838 , H01L21/68785
摘要： An apparatus for supporting a wafer includes a base, and a gas-penetration layer. The gas-penetration layer and a portion of the base directly underlying the gas-penetration layer form a gas passage therebetween. The gas passage is configured to be sealed by the wafer placed directly over the gas-penetration layer. The apparatus further includes a valve connected to the gas passage.
摘要翻译： 用于支撑晶片的装置包括基座和气体穿透层。 气体渗透层和直接位于气体穿透层下方的基底的一部分在它们之间形成气体通道。 气体通道被直接设置在气体穿透层上方的晶片密封。 该装置还包括连接到气体通道的阀。
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公开(公告)号：US20110266691A1
公开(公告)日：2011-11-03
申请号：US12769251
申请日：2010-04-28
申请人： Jing-Cheng Lin , Ku-Feng Yang
发明人： Jing-Cheng Lin , Ku-Feng Yang
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L21/76816 , H01L21/76879 , H01L21/76898 , H01L23/49827 , H01L23/5226 , H01L24/05 , H01L24/13 , H01L24/14 , H01L2224/0401 , H01L2224/05572 , H01L2224/13025 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/14181 , H01L2224/73204 , H01L2924/0002 , H01L2924/01019 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/14 , H01L2224/05552
摘要： A device includes a substrate, and a plurality of dielectric layers over the substrate. A plurality of metallization layers is formed in the plurality of dielectric layers, wherein at least one of the plurality of metallization layers comprises a metal pad. A through-substrate via (TSV) extends from the top level of the plurality of the dielectric layers to a bottom surface of the substrate. A deep conductive via extends from the top level of the plurality of dielectric layers to land on the metal pad. A metal line is formed over the top level of the plurality of dielectric layers and interconnecting the TSV and the deep conductive via.
摘要翻译： 一种器件包括衬底和在衬底上的多个电介质层。 多个金属化层形成在多个电介质层中，其中多个金属化层中的至少一个包括金属焊盘。 贯穿衬底通孔（TSV）从多个电介质层的顶层延伸到衬底的底表面。 深导电通孔从多个电介质层的顶层延伸到金属焊盘上。 金属线形成在多个电介质层的顶层上并且互连TSV和深导电通孔。
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公开(公告)号：US08580682B2
公开(公告)日：2013-11-12
申请号：US12895296
申请日：2010-09-30
申请人： Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
发明人： Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/0401 , H01L2224/05025 , H01L2224/13025 , H01L2924/00013 , H01L2924/14 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A device includes a substrate having a first surface, and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the substrate. A dielectric layer is disposed over the substrate. A metal pad is disposed in the dielectric layer and physically contacting the TSV, wherein the metal pad and the TSV are formed of a same material, and wherein no layer formed of a material different from the same material is between and spacing the TSV and the metal pad apart from each other.
摘要翻译： 一种器件包括具有第一表面的衬底和与第一表面相对的第二表面。 贯穿基板通孔（TSV）从基板的第一表面延伸到第二表面。 电介质层设置在衬底上。 金属焊盘设置在电介质层中并物理接触TSV，其中金属焊盘和TSV由相同的材料形成，并且其中由不同于相同材料的材料形成的层不在其间并且使TSV和 金属垫彼此分开。
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公开(公告)号：US20120083116A1
公开(公告)日：2012-04-05
申请号：US12895296
申请日：2010-09-30
申请人： Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
发明人： Ku-Feng Yang , Yung-Chi Lin , Hung-Pin Chang , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/76898 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/0401 , H01L2224/05025 , H01L2224/13025 , H01L2924/00013 , H01L2924/14 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A device includes a substrate having a first surface, and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the substrate. A dielectric layer is disposed over the substrate. A metal pad is disposed in the dielectric layer and physically contacting the TSV, wherein the metal pad and the TSV are formed of a same material, and wherein no layer formed of a material different from the same material is between and spacing the TSV and the metal pad apart from each other.
摘要翻译： 一种器件包括具有第一表面的衬底和与第一表面相对的第二表面。 贯穿基板通孔（TSV）从基板的第一表面延伸到第二表面。 电介质层设置在衬底上。 金属焊盘设置在电介质层中并物理接触TSV，其中金属焊盘和TSV由相同的材料形成，并且其中由不同于相同材料的材料形成的层不在其间并且使TSV和 金属垫彼此分开。
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公开(公告)号：US08500182B2
公开(公告)日：2013-08-06
申请号：US12818022
申请日：2010-06-17
申请人： Ku-Feng Yang , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ku-Feng Yang , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： B25J15/00
CPC分类号： H01L21/67346 , H01L21/6838 , H01L21/68785
摘要： An apparatus for supporting a wafer includes a base, and a gas-penetration layer. The gas-penetration layer and a portion of the base directly underlying the gas-penetration layer form a gas passage therebetween. The gas passage is configured to be sealed by the wafer placed directly over the gas-penetration layer. The apparatus further includes a valve connected to the gas passage.
摘要翻译： 用于支撑晶片的装置包括基座和气体穿透层。 气体渗透层和直接位于气体穿透层下方的基底的一部分在它们之间形成气体通道。 气体通道被直接设置在气体穿透层上方的晶片密封。 该装置还包括连接到气体通道的阀。
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公开(公告)号：US09293366B2
公开(公告)日：2016-03-22
申请号：US12769251
申请日：2010-04-28
申请人： Jing-Cheng Lin , Ku-Feng Yang
发明人： Jing-Cheng Lin , Ku-Feng Yang
IPC分类号： H01L29/40 , H01L21/768 , H01L23/498 , H01L23/00
CPC分类号： H01L23/481 , H01L21/76816 , H01L21/76879 , H01L21/76898 , H01L23/49827 , H01L23/5226 , H01L24/05 , H01L24/13 , H01L24/14 , H01L2224/0401 , H01L2224/05572 , H01L2224/13025 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/14181 , H01L2224/73204 , H01L2924/0002 , H01L2924/01019 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/14 , H01L2224/05552
摘要： A device includes a substrate, and a plurality of dielectric layers over the substrate. A plurality of metallization layers is formed in the plurality of dielectric layers, wherein at least one of the plurality of metallization layers comprises a metal pad. A through-substrate via (TSV) extends from the top level of the plurality of the dielectric layers to a bottom surface of the substrate. A deep conductive via extends from the top level of the plurality of dielectric layers to land on the metal pad. A metal line is formed over the top level of the plurality of dielectric layers and interconnecting the TSV and the deep conductive via.
摘要翻译： 一种器件包括衬底和在衬底上的多个电介质层。 多个金属化层形成在多个电介质层中，其中多个金属化层中的至少一个包括金属焊盘。 贯穿衬底通孔（TSV）从多个电介质层的顶层延伸到衬底的底表面。 深导电通孔从多个电介质层的顶层延伸到金属焊盘上。 金属线形成在多个电介质层的顶层上并且互连TSV和深导电通孔。
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