发明申请
- 专利标题： SEMICONDUCTOR CAPACITOR
- 专利标题（中）： 半导体电容器
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申请号： US12837121申请日： 2010-07-15
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公开(公告)号： US20120012979A1公开(公告)日： 2012-01-19
- 发明人: David Vaclav Horak , Shom Ponoth , Hosadurga Shobha , Chih-Chao Yang
- 申请人： David Vaclav Horak , Shom Ponoth , Hosadurga Shobha , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
An improved semiconductor capacitor and method of fabrication is disclosed. A nitride stack, comprising alternating sublayers of slow-etch and fast-etch nitride is deposited on a substrate. The nitride stack is etched via an anisotropic etch technique such as reactive ion etch. A wet etch then etches the nitride stack, forming a corrugated shape. The corrugated shape increases surface area, and hence increases the capacitance of the capacitor.
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