发明申请
- 专利标题： Doping Minor Elements into Metal Bumps
- 专利标题（中）： 将次要元素掺入金属冲击
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申请号： US12843760申请日： 2010-07-26
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公开(公告)号： US20120018878A1公开(公告)日： 2012-01-26
- 发明人: Ming-Da Cheng , MIng-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
- 申请人： Ming-Da Cheng , MIng-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/288
- IPC分类号： H01L21/288 ; H01L29/45
摘要：
A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.
公开/授权文献
- US08227334B2 Doping minor elements into metal bumps 公开/授权日：2012-07-24
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