- 专利标题： Systems and Methods for Forming Metal Oxide Layers
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申请号： US13249544申请日： 2011-09-30
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公开(公告)号： US20120021587A1公开(公告)日： 2012-01-26
- 发明人: Brian A. Vaartstra , Timothy A. Quick
- 申请人： Brian A. Vaartstra , Timothy A. Quick
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/28 ; H01L21/31
摘要：
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
公开/授权文献
- US08394725B2 Systems and methods for forming metal oxide layers 公开/授权日：2013-03-12
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