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    Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material
    2.
    发明授权
    Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material 有权
    形成硫族化物材料的方法和形成包括硫族化物材料的电阻式随机存取存储器件的方法

    公开(公告)号：US08679914B2

    公开(公告)日：2014-03-25

    申请号：US12917930

    申请日：2010-11-02

    申请人： Timothy A. Quick

    发明人： Timothy A. Quick

    IPC分类号： H01L21/336 ,  H01L21/00 ,  H01L21/425

    CPC分类号： H01L45/142 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

    摘要： A method of forming a chalcogenide material on a surface of a substrate comprising exposing a surface of a substrate to ionized gas clusters from a source gas, the ionized gas clusters comprising at least one chalcogen and at least one electropositive element. A method of forming a resistive random access memory device is also disclosed. The method comprises forming a plurality of memory cells wherein each cell of the plurality of memory cells is formed by forming a metal on a first electrode, forming a chalcogenide material on the metal by a gas cluster ion beam process, and forming a second electrode on the chalcogenide material. A method of forming another resistive random access memory device and a random access memory device including the chalcogenide material are also disclosed.

    摘要翻译： 一种在衬底的表面上形成硫族化物材料的方法，包括将基底的表面暴露于源气体的离子化气体簇，所述离子化气体簇包含至少一个硫属元素和至少一个正电荷元素。 还公开了一种形成电阻随机存取存储器件的方法。 该方法包括形成多个存储单元，其中多个存储单元中的每个单元通过在第一电极上形成金属而形成，通过气体簇离子束工艺在金属上形成硫族化物材料，并且形成第二电极 硫族化物材料。 还公开了形成另一个电阻性随机存取存储器件和包括硫族化物材料的随机存取存储器件的方法。

    Semiconductor processing
    4.
    发明授权
    Semiconductor processing 有权
    半导体处理

    公开(公告)号：US08455296B2

    公开(公告)日：2013-06-04

    申请号：US13190879

    申请日：2011-07-26

    申请人： Eugene P. Marsh ,  Timothy A. Quick

    发明人： Eugene P. Marsh ,  Timothy A. Quick

    IPC分类号： H01L21/00

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683

    摘要： Devices, methods, and systems for semiconductor processing are described herein. A number of method embodiments of semiconductor processing can include forming a silicon layer on a structure, forming an opening through the silicon layer and into the structure, and selectively forming a resistance variable material in the opening such that the resistance variable material does not form on the silicon layer.

    摘要翻译： 本文描述了用于半导体处理的装置，方法和系统。 半导体处理的多个方法实施例可以包括在结构上形成硅层，通过硅层形成开口并进入结构，并且在开口中选择性地形成电阻可变材料，使得电阻变化材料不形成 硅层。

    Phase change memory cell structures and methods
    7.
    发明授权
    Phase change memory cell structures and methods 有权

    公开(公告)号：US08298938B2

    公开(公告)日：2012-10-30

    申请号：US13342172

    申请日：2012-01-02

    申请人： Timothy A. Quick ,  Eugene P. Marsh ,  Joseph N. Greeley

    发明人： Timothy A. Quick ,  Eugene P. Marsh ,  Joseph N. Greeley

    IPC分类号： H01L21/44

    CPC分类号： H01L45/1683 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/144

    摘要： Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third region of the dielectric stack structure, the second region having a thermal conductivity different than a thermal conductivity of the first region and different than a thermal conductivity of the third region of the dielectric stack. One or more embodiments include forming a via through the first, second, and third regions of the dielectric stack structure, depositing a phase change material in the via, and forming a second electrode on the phase change material.

    METHOD OF FORMING A CHALCOGENIDE MATERIAL, METHODS OF FORMING A RESISTIVE RANDOM ACCESS MEMORY DEVICE INCLUDING A CHALCOGENIDE MATERIAL, AND RANDOM ACCESS MEMORY DEVICES INCLUDING A CHALCOGENIDE MATERIAL
    9.
    发明申请
    METHOD OF FORMING A CHALCOGENIDE MATERIAL, METHODS OF FORMING A RESISTIVE RANDOM ACCESS MEMORY DEVICE INCLUDING A CHALCOGENIDE MATERIAL, AND RANDOM ACCESS MEMORY DEVICES INCLUDING A CHALCOGENIDE MATERIAL 有权
    形成氯化铝材料的方法，形成包括氯化铝材料的电阻随机存取存储器件的方法以及包括氯化铝材料的随机存取存储器件

    公开(公告)号：US20120104347A1

    公开(公告)日：2012-05-03

    申请号：US12917930

    申请日：2010-11-02

    申请人： Timothy A. Quick

    发明人： Timothy A. Quick

    IPC分类号： H01L45/00 ,  H01L21/20

    CPC分类号： H01L45/142 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

    摘要： A method of forming a chalcogenide material on a surface of a substrate comprising exposing a surface of a substrate to ionized gas clusters from a source gas, the ionized gas clusters comprising at least one chalcogen and at least one electropositive element. A method of forming a resistive random access memory device is also disclosed. The method comprises forming a plurality of memory cells wherein each cell of the plurality of memory cells is formed by forming a metal on a first electrode, forming a chalcogenide material on the metal by a gas cluster ion beam process, and forming a second electrode on the chalcogenide material. A method of forming another resistive random access memory device and a random access memory device including the chalcogenide material are also disclosed.

    摘要翻译： 一种在衬底的表面上形成硫族化物材料的方法，包括将基底的表面暴露于源气体的离子化气体簇，所述离子化气体簇包含至少一个硫属元素和至少一个正电荷元素。 还公开了一种形成电阻随机存取存储器件的方法。 该方法包括形成多个存储单元，其中多个存储单元中的每个单元通过在第一电极上形成金属而形成，通过气体簇离子束工艺在金属上形成硫族化物材料，并且形成第二电极 硫族化物材料。 还公开了形成另一个电阻性随机存取存储器件和包括硫族化物材料的随机存取存储器件的方法。

    Methods of forming metal-containing structures, and methods of forming germanium-containing structures
    10.
    发明授权
    Methods of forming metal-containing structures, and methods of forming germanium-containing structures 有权

    公开(公告)号：US08163341B2

    公开(公告)日：2012-04-24

    申请号：US12273737

    申请日：2008-11-19

    申请人： Timothy A. Quick ,  Eugene P. Marsh

    发明人： Timothy A. Quick ,  Eugene P. Marsh

    IPC分类号： C23C16/00 ,  C23C16/06 ,  C23C16/18

    CPC分类号： C23C16/45527 ,  C23C16/45534

    摘要： Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.