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公开(公告)号：US20120021587A1
公开(公告)日：2012-01-26
申请号：US13249544
申请日：2011-09-30
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
CPC classification number: H01L21/3141 , C23C16/40 , C23C16/401 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02219 , H01L21/0228 , H01L21/31612 , H01L21/31616 , H01L21/31645 , H01L28/40
Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
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2.发明授权Systems and methods for forming tantalum oxide layers and tantalum precursor compounds 有权用于形成氧化钽层和钽前体化合物的系统和方法公开(公告)号：US07858815B2
公开(公告)日：2010-12-28
申请号：US12106510
申请日：2008-04-21
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
CPC classification number: H01L21/02183 , C07F9/005 , C23C16/405 , C23C16/45553 , H01L21/02205 , H01L21/02271 , H01L21/0228 , H01L21/31604 , H01L21/31683 , H01L28/40
Abstract: A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
Abstract translation: 例如，使用气相沉积法和包括醇盐配体的钽前体化合物在基板，特别是半导体基板或基板组件上形成（以及用于形成）氧化钽层的方法。
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公开(公告)号：US07332442B2
公开(公告)日：2008-02-19
申请号：US11485105
申请日：2006-07-12
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
IPC: H01L21/31
CPC classification number: H01L21/3141 , C23C16/40 , C23C16/401 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02219 , H01L21/0228 , H01L21/31612 , H01L21/31616 , H01L21/31645 , H01L28/40
Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Abstract translation: 使用气相沉积工艺和臭氧与一种或多种金属有机胺前体化合物在衬底，特别是半导体衬底或衬底组件上形成（以及用于形成）金属氧化物层，优选电介质层的方法。
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4.发明授权Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands 有权使用含有氨基硅烷配体的金属化合物形成金属氧化物的系统和方法公开(公告)号：US07087481B2
公开(公告)日：2006-08-08
申请号：US10229841
申请日：2002-08-28
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
IPC: H01L21/00
CPC classification number: H01L21/02271 , C23C16/405 , C23C16/45553 , H01L21/02183 , H01L21/02194 , H01L21/02205 , H01L21/0228 , H01L21/31604 , H01L21/31683 , H01L28/40
Abstract: A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
Abstract translation: 使用气相沉积工艺和一种或多种包括氨基硅烷配体的前体化合物在基底，特别是半导体衬底或衬底组件上形成（和形成）金属氧化物层的方法。
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公开(公告)号：US08114219B2
公开(公告)日：2012-02-14
申请号：US12713700
申请日：2010-02-26
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
IPC: C23C16/00
CPC classification number: H01L21/3141 , C23C16/40 , C23C16/401 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02219 , H01L21/0228 , H01L21/31612 , H01L21/31616 , H01L21/31645 , H01L28/40
Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Abstract translation: 使用气相沉积工艺和臭氧与一种或多种金属有机胺前体化合物在衬底，特别是半导体衬底或衬底组件上形成（以及用于形成）金属氧化物层，优选电介质层的方法。
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Patent Agency Ranking
公开(公告)号：US07482284B2
公开(公告)日：2009-01-27
申请号：US11711920
申请日：2007-02-28
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
IPC: H01L21/31
CPC classification number: H01L21/3141 , C23C16/40 , C23C16/401 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02219 , H01L21/0228 , H01L21/31612 , H01L21/31616 , H01L21/31645 , H01L28/40
Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Abstract translation: 使用气相沉积工艺和臭氧与一种或多种金属有机胺前体化合物在衬底，特别是半导体衬底或衬底组件上形成（以及用于形成）金属氧化物层，优选电介质层的方法。
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7.发明申请SYSTEMS AND METHODS FOR FORMING TANTALUM OXIDE LAYERS AND TANTALUM PRECURSOR COMPOUNDS 有权形成氧化钽层和钛前驱体化合物的系统和方法公开(公告)号：US20080227303A1
公开(公告)日：2008-09-18
申请号：US12106510
申请日：2008-04-21
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
IPC: H01L21/285 , C23C16/06 , C01G35/00
CPC classification number: H01L21/02183 , C07F9/005 , C23C16/405 , C23C16/45553 , H01L21/02205 , H01L21/02271 , H01L21/0228 , H01L21/31604 , H01L21/31683 , H01L28/40
Abstract: A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
Abstract translation: 例如，使用气相沉积法和包括醇盐配体的钽前体化合物在基板，特别是半导体基板或基板组件上形成（以及用于形成）氧化钽层的方法。
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公开(公告)号：US20090149033A1
公开(公告)日：2009-06-11
申请号：US12352775
申请日：2009-01-13
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
IPC: H01L21/31
CPC classification number: H01L21/3141 , C23C16/40 , C23C16/401 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02219 , H01L21/0228 , H01L21/31612 , H01L21/31616 , H01L21/31645 , H01L28/40
Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Abstract translation: 使用气相沉积工艺和臭氧与一种或多种金属有机胺前体化合物在衬底，特别是半导体衬底或衬底组件上形成（以及用于形成）金属氧化物层，优选电介质层的方法。
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9.发明申请SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL COMPOUNDS CONTAINING AMINOSILANE LIGANDS 失效使用含有氨基硅烷配位体的金属化合物形成金属氧化物的系统和方法公开(公告)号：US20090042406A1
公开(公告)日：2009-02-12
申请号：US12248544
申请日：2008-10-09
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
CPC classification number: H01L21/02271 , C23C16/405 , C23C16/45553 , H01L21/02183 , H01L21/02194 , H01L21/02205 , H01L21/0228 , H01L21/31604 , H01L21/31683 , H01L28/40
Abstract: A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
Abstract translation: 使用气相沉积工艺和一种或多种包括氨基硅烷配体的前体化合物在基底，特别是半导体衬底或衬底组件上形成（和形成）金属氧化物层的方法。
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公开(公告)号：US20120067283A1
公开(公告)日：2012-03-22
申请号：US13302223
申请日：2011-11-22
Applicant: Brian A. Vaartstra , Timothy A. Quick
Inventor： Brian A. Vaartstra , Timothy A. Quick
IPC: C23C16/44
CPC classification number: H01L21/3141 , C23C16/40 , C23C16/401 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02219 , H01L21/0228 , H01L21/31612 , H01L21/31616 , H01L21/31645 , H01L28/40
Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Abstract translation: 使用气相沉积工艺和臭氧与一种或多种金属有机胺前体化合物在衬底，特别是半导体衬底或衬底组件上形成（以及用于形成）金属氧化物层，优选电介质层的方法。
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