Invention Application
US20120025400A1 FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND FLIP CHIP TYPE SEMICONDUCTOR DEVICE
有权
用于倒圆片型半导体背表面的薄膜，用于半导体背面的双面复合薄膜，用于制造半导体器件的方法和片状芯片型半导体器件
- Patent Title: FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND FLIP CHIP TYPE SEMICONDUCTOR DEVICE
- Patent Title (中): 用于倒圆片型半导体背表面的薄膜，用于半导体背面的双面复合薄膜，用于制造半导体器件的方法和片状芯片型半导体器件
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Application No.: US13191791Application Date: 2011-07-27
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Publication No.: US20120025400A1Publication Date: 2012-02-02
- Inventor: Yusuke KOMOTO , Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
- Applicant: Yusuke KOMOTO , Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
- Applicant Address: JP Osaka
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Osaka
- Priority: JP2010-169501 20100728
- Main IPC: H01L23/48
- IPC: H01L23/48 ; B32B27/00 ; C09J133/12 ; C09J11/02 ; C09J163/00 ; C09J171/10 ; H01L21/78 ; B32B7/12
Abstract:
The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.
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Information query
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