发明申请
- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ACID DIFFUSION
- 专利标题（中）： 使用酸性扩散制造半导体器件的方法
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申请号： US13185897申请日： 2011-07-19
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公开(公告)号： US20120028434A1公开(公告)日： 2012-02-02
- 发明人: Hyung-rae LEE , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
- 申请人： Hyung-rae LEE , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
- 优先权： KR10-2010-0072484 20100727
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/76
摘要：
A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.
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