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公开(公告)号:US20120028434A1
公开(公告)日:2012-02-02
申请号:US13185897
申请日:2011-07-19
申请人: Hyung-rae LEE , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
发明人: Hyung-rae LEE , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
IPC分类号: H01L21/306 , H01L21/76
CPC分类号: H01L27/10891 , G03F7/40 , H01L21/0206 , H01L21/823842 , H01L27/0207 , H01L27/10876 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/66606
摘要: A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.
摘要翻译: 一种制造半导体器件的方法包括在衬底上的第一区域上形成抗蚀剂图案,使包含酸源的除去溶液与抗蚀剂图案接触,并与衬底的第二区域分离,残留在第二区域上的抗蚀剂残留物 通过使用从除去溶液中的酸源获得的酸,并从底物除去分解的抗蚀剂残留物和除去溶液的底物区域。