发明申请
US20120038022A1 INSULATING SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
审中-公开
用于半导体器件的绝缘衬底和半导体器件
- 专利标题： INSULATING SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 用于半导体器件的绝缘衬底和半导体器件
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申请号： US13259076申请日： 2009-10-26
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公开(公告)号： US20120038022A1公开(公告)日： 2012-02-16
- 发明人: Kazuhide Tomiyasu , Yutaka Takafuji , Yasumori Fukushima , Kazuo Nakagawa , Kenshi Tada , Michiko Takei , Shin Matsumoto
- 申请人： Kazuhide Tomiyasu , Yutaka Takafuji , Yasumori Fukushima , Kazuo Nakagawa , Kenshi Tada , Michiko Takei , Shin Matsumoto
- 申请人地址： JP Osaka
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka
- 优先权： JP2009-074752 20090325
- 国际申请： PCT/JP2009/068342 WO 20091026
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; B32B3/00
摘要：
Disclosed is a glass substrate (20) that is capable of constituting a semiconductor device (10) when a monocrystalline silicon thin film (90) is provided on the surface of the substrate by transfer. The surface of the glass substrate (20) has a receiving surface (22) onto which the monocrystalline silicon thin film (90) can be provided. The height of the ripples on the receiving surface (22) having a period of 200 to 500 microns is no more than 0.40 nm.
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