公开(公告)号：US20100283104A1

公开(公告)日：2010-11-11

申请号：US12746317

申请日：2008-11-25

申请人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

发明人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

IPC分类号： H01L29/786 ,  H01L21/762 ,  H01L21/28

CPC分类号： H01L27/1266 ,  H01L21/263 ,  H01L27/1214 ,  H01L29/6675 ,  H01L29/7836

摘要： An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step.

摘要翻译： 元件部分形成步骤包括在基底层的表面上形成绝缘膜的绝缘膜形成步骤，在绝缘膜的表面上均匀地形成导电层的导电层形成步骤和图案化的电极形成步骤 导电层形成电极。 在电极形成步骤之前，进行将分层材料离子注入基层以形成分层的分层形成步骤。

公开(公告)号：US20120038022A1

公开(公告)日：2012-02-16

申请号：US13259076

申请日：2009-10-26

申请人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuo Nakagawa ,  Kenshi Tada ,  Michiko Takei ,  Shin Matsumoto

发明人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuo Nakagawa ,  Kenshi Tada ,  Michiko Takei ,  Shin Matsumoto

IPC分类号： H01L29/02 ,  B32B3/00

CPC分类号： H01L27/1218 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1266 ,  H01L29/66772 ,  Y10T428/24355

摘要： Disclosed is a glass substrate (20) that is capable of constituting a semiconductor device (10) when a monocrystalline silicon thin film (90) is provided on the surface of the substrate by transfer. The surface of the glass substrate (20) has a receiving surface (22) onto which the monocrystalline silicon thin film (90) can be provided. The height of the ripples on the receiving surface (22) having a period of 200 to 500 microns is no more than 0.40 nm.

摘要翻译： 公开了当通过转印在基板的表面上设置单晶硅薄膜（90）时能够构成半导体器件（10）的玻璃基板（20）。 玻璃基板（20）的表面具有能够设置单晶硅薄膜（90）的接收面（22）。 在接收表面（22）上具有200至500微米的周期的波纹的高度不大于0.40nm。

公开(公告)号：US20110042693A1

公开(公告)日：2011-02-24

申请号：US12933042

申请日：2009-04-09

申请人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

发明人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

IPC分类号： H01L33/08 ,  H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/1214

摘要： A semiconductor device (10) includes a support substrate (14), an adhered device part (11) adhered to the support substrate (14), a multilayer device part (13) stacked on the adhered device part (11), and an adjacent device part (12) formed in a region adjacent to the adhered device part on the support substrate (14). The adhered device part (11), the multilayer device part (13), and the adjacent device part (12) are electrically connected to one another.

摘要翻译： 半导体装置（10）包括支撑基板（14），粘附到支撑基板（14）的粘合装置部分（11），堆叠在粘附装置部分（11）上的多层装置部分（13） 装置部分（12）形成在与支撑基板（14）上的粘附装置部分相邻的区域中。 粘合装置部分（11），多层装置部分（13）和相邻装置部分（12）彼此电连接。

公开(公告)号：US20100270658A1

公开(公告)日：2010-10-28

申请号：US12746156

申请日：2008-09-12

申请人： Kazuo Nakagawa ,  Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kenshi Tada ,  Yutaka Takafuji

发明人： Kazuo Nakagawa ,  Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kenshi Tada ,  Yutaka Takafuji

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78606

摘要： A method is disclosed for producing a semiconductor device produced by (i) doping hydrogen ions or rare gas ions into a device substrate in which a transfer layer (16) is formed, (ii) then bonding the device substrate to a carrier target substrate, and (iii) transferring the transfer layer (16) onto the carrier substrate (30) by cleaving the device substrate along a portion in which the hydrogen ions or the rare gas ions are doped, the method including providing a blocking layer (11) for blocking diffusion of a bubble-causing substance between (i) a bonding surface (13), which serves as a bonding interface between the device substrate and the carrier substrate, and (ii) the transfer layer (16). This prevents bubbles from forming at the bonding interface between the semiconductor substrate and the target substrate due to the diffusion of the bubble-causing substance.

摘要翻译： 公开了一种用于制造半导体器件的方法，该半导体器件通过（i）将氢离子或稀有气体离子掺杂到其中形成转移层（16）的器件衬底中，（ii）然后将器件衬底接合到载体目标衬底， 以及（iii）通过沿着掺杂有氢离子或稀有气体离子的部分裂开所述器件衬底，将所述转移层（16）转移到所述载体衬底（30）上，所述方法包括提供用于 在（i）用作器件衬底和载体衬底之间的结合界面的接合表面（13）和（ii）转移层（16）之间阻塞气泡引起物质的扩散。 这样可防止由于起泡物质的扩散而在半导体衬底与目标衬底之间的结合界面处形成气泡。

公开(公告)号：US08361882B2

公开(公告)日：2013-01-29

申请号：US13139988

申请日：2009-08-21

申请人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

发明人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

IPC分类号： H01L21/30 ,  H01L29/06

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78636

摘要： Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.

摘要翻译： 提供一种其中执行以下步骤的半导体器件制造方法; 在基体层上形成元素的至少一部分的步骤，形成剥离层的步骤，形成平坦化膜的步骤; 通过在分离区域分离基体层而形成模具的步骤; 通过将该模具接合在平坦化膜上而将芯片接合到基板的步骤; 以及沿剥离层剥离和去除基体层的一部分的步骤。 在成形模具的步骤之前，形成在平坦化膜的表面上开口的槽，使得至少一部分分离区域包含在槽的底面上，并且形成模具，使得 模具具有多边形外形，其中通过形成凹槽来执行所有内角都是钝的。

公开(公告)号：US20110241174A1

公开(公告)日：2011-10-06

申请号：US13139988

申请日：2009-08-21

申请人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

发明人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

IPC分类号： H01L21/301 ,  H01L29/06

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78636

摘要： Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.

摘要翻译： 提供一种其中执行以下步骤的半导体器件制造方法; 在基体层上形成元素的至少一部分的步骤，形成剥离层的步骤，形成平坦化膜的步骤; 通过在分离区域分离基体层而形成模具的步骤; 通过将该模具接合在平坦化膜上而将芯片接合到基板的步骤; 以及沿剥离层剥离和去除基体层的一部分的步骤。 在成型模具的步骤之前，形成在平坦化膜的表面上开口的槽，使得至少一部分分离区域包含在槽的底表面上，并且形成模具，使得 模具具有多边形外形，其中通过形成凹槽来执行所有内角都是钝的。

公开(公告)号：US20100244185A1

公开(公告)日：2010-09-30

申请号：US12742932

申请日：2008-10-22

申请人： Yutaka Takafuji ,  Yasumori Fukushima ,  Kenshi Tada ,  Kazuo Nakagawa ,  Shin Matsumoto ,  Kazuhide Tomiyasu

发明人： Yutaka Takafuji ,  Yasumori Fukushima ,  Kenshi Tada ,  Kazuo Nakagawa ,  Shin Matsumoto ,  Kazuhide Tomiyasu

IPC分类号： H01L27/12 ,  H01L21/762 ,  H01L21/86

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/66772

摘要： The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics.The present invention is a production method of a semiconductor device including single-crystal semiconductor thin film-including single-crystal semiconductor elements on an insulating substrate, the production method including the successive steps of a first heat treatment step and a second heat treatment step, wherein in the first heat treatment step, a single-crystal semiconductor thin film undergoes a heat treatment at lower than 650° C., the single-crystal semiconductor thin film containing a doped impurity and including at least part of each one of single-crystal semiconductor elements, the single-crystal semiconductor thin film bonded to an insulating substrate, and in the second heat treatment step, the single-crystal semiconductor thin film undergoes a heat treatment at 650° C. or higher for a time shorter than a treatment time in the first heat treatment step.

摘要翻译： 本发明提供一种半导体器件，含有单晶半导体薄膜的衬底及其制造方法，其中，通过转印到低耐热绝缘衬底上制造的包含单晶半导体薄膜的单晶半导体元件 具有增强的晶体管特性。 本发明是一种在绝缘基板上包括单晶半导体薄膜的单晶半导体元件的半导体器件的制造方法，该制造方法包括第一热处理工序和第二热处理工序的连续工序， 其中，在所述第一热处理工序中，单晶半导体薄膜在低于650℃下经受热处理，所述单晶半导体薄膜含有掺杂杂质，并且包括单晶的至少一部分 半导体元件，与绝缘基板接合的单晶半导体薄膜，在第二热处理工序中，单晶半导体薄膜在650℃以上进行比处理时间短的时间的热处理 在第一热处理步骤中。

公开(公告)号：US20100295105A1

公开(公告)日：2010-11-25

申请号：US12746323

申请日：2008-09-25

申请人： Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Kenshi Tada ,  Michiko Takei

发明人： Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Kenshi Tada ,  Michiko Takei

IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L29/73 ,  H01L29/861 ,  H01L21/331 ,  H01L21/336

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833

摘要： A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a delaminating layer in the base layer; a bonding step of bonding the base layer having the element portion to a substrate; and a separation step of separating and removing a portion of the base layer in the depth direction along the delaminating layer by heating the base layer bonded to the substrate. The method further includes, after the separation step, an ion implantation step of ion-implanting a p-type impurity element in the base layer for adjusting the impurity concentration of a p-type region of the element.

摘要翻译： 一种制造半导体器件的方法包括：元件部分形成步骤，在基底层上形成元件部分; 在所述基底层中形成剥离层的剥离层形成工序; 键合步骤，将具有元件部分的基底层粘合到基底上; 以及分离步骤，通过加热结合到基板的基底层，沿着剥离层在深度方向上分离和去除基底层的一部分。 该方法还包括在分离步骤之后的离子注入步骤，用于在基底层中离子注入p型杂质元素，以调整元件的p型区域的杂质浓度。

公开(公告)号：US20100244136A1

公开(公告)日：2010-09-30

申请号：US12742660

申请日：2008-10-22

申请人： Yutaka Takafuji ,  Kazuo Nakagawa ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei

发明人： Yutaka Takafuji ,  Kazuo Nakagawa ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1229 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/665 ,  H01L29/66772

摘要： The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics and a reduced wiring resistance.The present invention is a production method of a semiconductor device including single-crystal semiconductor thin film-including single-crystal semiconductor elements on an insulating substrate,the production method including a heat treatment step of subjecting a single-crystal semiconductor thin film to a heat treatment at 650° C. or higher,the single-crystal semiconductor thin film including at least part of each one of single-crystal semiconductor elements and boded to an intermediate substrate with a heat-resistant temperature higher than that of the insulating substrate.

摘要翻译： 本发明提供一种半导体器件，含有单晶半导体薄膜的衬底及其制造方法，其中，通过转印到低耐热绝缘衬底上制造的包含单晶半导体薄膜的单晶半导体元件 具有增强的晶体管特性和降低的布线电阻。 本发明是一种在绝缘基板上包括单晶半导体薄膜的单晶半导体元件的半导体器件的制造方法，该制造方法包括对单晶半导体薄膜进行热处理的热处理工序 在650℃以上的处理，所述单晶半导体薄膜包含单晶半导体元件的至少一部分，并且与耐热温度高于绝缘基板的中间基板接合。

公开(公告)号：US20110309467A1

公开(公告)日：2011-12-22

申请号：US13141332

申请日：2009-11-25

申请人： Shin Matsumoto ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Kenshi Tada

发明人： Shin Matsumoto ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Kenshi Tada

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L27/1266

摘要： Disclosed is a semiconductor device including a substrate for bonding (10a), and a semiconductor element part (25aa) which is bonded to the substrate (10a), and in which an element pattern (T) is formed, wherein in a bonded interface between the substrate (10a) and the semiconductor element part (25aa), recessed portions (23a) are formed in at least one of the substrate (10a) and the semiconductor element part (25aa).

摘要翻译： 公开了一种包括用于接合的基板（10a）的半导体器件和接合到基板（10a）的半导体元件部分（25aa），并且其中形成有元件图案（T），其中在 在基板（10a）和半导体元件部（25aa）中的至少一个上形成有基板（10a）和半导体元件部（25a），凹部（23a）。