发明申请
- 专利标题: Composite Carrier Structure
- 专利标题(中): 复合载体结构
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申请号: US12858211申请日: 2010-08-17
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公开(公告)号: US20120045611A1公开(公告)日: 2012-02-23
- 发明人: Ying-Ching Shih , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
- 申请人: Ying-Ching Shih , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/12
- IPC分类号: H01L23/12 ; B32B3/24 ; B32B3/26 ; B32B38/10 ; H01L21/50 ; B32B37/02 ; B32B37/12 ; B32B17/06 ; B32B7/12
摘要:
A composite carrier structure for manufacturing semiconductor devices is provided. The composite carrier structure utilizes multiple carrier substrates, e.g., glass or silicon substrates, coupled together by interposed adhesive layers. The composite carrier structure may be attached to a wafer or a die for, e.g., backside processing, such as thinning processes. In an embodiment, the composite carrier structure comprises a first carrier substrate having through-substrate vias formed therethrough. The first substrate is attached to a second substrate using an adhesive such that the adhesive may extend into the through-substrate vias.
公开/授权文献
- US08846499B2 Composite carrier structure 公开/授权日:2014-09-30
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