发明申请
- 专利标题： GATE INSULATOR LAYER FOR ORGANIC ELECTRONIC DEVICES
- 专利标题（中）： 用于有机电子设备的栅绝缘层
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申请号： US13223884申请日： 2011-09-01
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公开(公告)号： US20120056183A1公开(公告)日： 2012-03-08
- 发明人: David Christoph Mueller , Toby Cull , Pawel Miskiewicz , Miguel Carrasco-Orozco , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
- 申请人： David Christoph Mueller , Toby Cull , Pawel Miskiewicz , Miguel Carrasco-Orozco , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
- 申请人地址： US OH Brecksville DE Darmstadt
- 专利权人： Promerus LLC,Merck Patent GmbH
- 当前专利权人： Promerus LLC,Merck Patent GmbH
- 当前专利权人地址： US OH Brecksville DE Darmstadt
- 优先权： EP10009118.0 20100902
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336 ; H01L29/04
摘要：
Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.
公开/授权文献
- US09175123B2 Gate insulator layer for organic electronic devices 公开/授权日：2015-11-03
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