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公开(公告)号：US09175123B2
公开(公告)日：2015-11-03
申请号：US13223884
申请日：2011-09-01
申请人： David Christoph Mueller , Toby Cull , Pawel Miskiewicz , Miguel Carrasco-Orozco , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
发明人： David Christoph Mueller , Toby Cull , Pawel Miskiewicz , Miguel Carrasco-Orozco , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
IPC分类号： B32B27/32 , C08F132/08 , C08F232/00 , H01L51/05
CPC分类号： H01L51/052 , C08F32/04 , C08F232/00 , C08L45/00 , H01L51/0035 , H01L51/004 , H01L51/0043 , H01L51/0537 , H01L51/0541 , H01L51/0545 , H01L51/107
摘要： Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.
摘要翻译： 根据本发明的实施方案提供了聚环烯烃在电子器件中的用途，更具体地说，涉及使用这种聚环烯烃作为用于制造电子器件的栅极绝缘体层，包括这种聚环烯烃栅极绝缘体的电子器件以及用于制备 这种多环烯烃栅极绝缘体层和包含这些层的电子器件。
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公开(公告)号：US20120056183A1
公开(公告)日：2012-03-08
申请号：US13223884
申请日：2011-09-01
申请人： David Christoph Mueller , Toby Cull , Pawel Miskiewicz , Miguel Carrasco-Orozco , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
发明人： David Christoph Mueller , Toby Cull , Pawel Miskiewicz , Miguel Carrasco-Orozco , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
IPC分类号： H01L29/786 , H01L21/336 , H01L29/04
CPC分类号： H01L51/052 , C08F32/04 , C08F232/00 , C08L45/00 , H01L51/0035 , H01L51/004 , H01L51/0043 , H01L51/0537 , H01L51/0541 , H01L51/0545 , H01L51/107
摘要： Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.
摘要翻译： 根据本发明的实施方案提供了聚环烯烃在电子器件中的用途，更具体地说，涉及使用这种聚环烯烃作为用于制造电子器件的栅极绝缘体层，包括这种聚环烯烃栅极绝缘体的电子器件以及用于制备 这种多环烯烃栅极绝缘体层和包含这些层的电子器件。
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公开(公告)号：US20120056249A1
公开(公告)日：2012-03-08
申请号：US13223784
申请日：2011-09-01
申请人： David Christoph Mueller , Pawel Miskiewicz , Toby Cull , Piotr Wierzchowiec , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
发明人： David Christoph Mueller , Pawel Miskiewicz , Toby Cull , Piotr Wierzchowiec , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
IPC分类号： B32B27/32 , C08F136/20 , H01L21/336 , C08F232/08 , H01L29/78 , C08F236/20 , C08F132/08
CPC分类号： H01L51/0043 , C08F232/00 , C08L65/00 , C08L2203/20 , H01L51/0035 , H01L51/0529 , H01L51/0541 , H01L51/0545 , Y10T428/31938
摘要： Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.
摘要翻译： 根据本发明的实施方案提供了聚环烯烃在电子器件中的用途，更具体地说，涉及使用这种聚环烯烃作为中间层，其用于制备电子器件的氟聚合物层，包含这种聚环烯夹层的电子器件和 制备这种聚环烯夹层和电子器件。
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公开(公告)号：US09583713B2
公开(公告)日：2017-02-28
申请号：US13223784
申请日：2011-09-01
申请人： David Christoph Mueller , Pawel Miskiewicz , Toby Cull , Piotr Wierzchowiec , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
发明人： David Christoph Mueller , Pawel Miskiewicz , Toby Cull , Piotr Wierzchowiec , Andrew Bell , Edmund Elce , Larry F. Rhodes , Kazuyoshi Fujita , Hendra Ng , Pramod Kandanarachchi , Steven Smith
IPC分类号： B32B27/32 , C08F132/08 , H01L51/00 , C08L65/00 , C08F232/00 , H01L51/05
CPC分类号： H01L51/0043 , C08F232/00 , C08L65/00 , C08L2203/20 , H01L51/0035 , H01L51/0529 , H01L51/0541 , H01L51/0545 , Y10T428/31938
摘要： Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.
摘要翻译： 根据本发明的实施方案提供了聚环烯烃在电子器件中的用途，更具体地说，涉及使用这种聚环烯烃作为中间层，其用于制备电子器件的氟聚合物层，包含这种聚环烯夹层的电子器件和 制备这种聚环烯夹层和电子器件。
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公开(公告)号：US08883546B2
公开(公告)日：2014-11-11
申请号：US13820318
申请日：2011-08-05
CPC分类号： H01L51/0004 , H01L51/0003 , H01L51/0012 , H01L51/0026 , H01L51/0096 , H01L51/0512 , H01L51/052 , H01L51/0541 , H01L51/0545
摘要： The present invention relates to a process for preparing improved electronic devices, in particular organic field effect transistors (OFETs), with patterned insulator and organic semiconductor layers.
摘要翻译： 本发明涉及一种制备具有图案化绝缘体和有机半导体层的改进的电子器件，特别是有机场效应晶体管（OFET）的方法。
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公开(公告)号：US20130153885A1
公开(公告)日：2013-06-20
申请号：US13820318
申请日：2011-08-05
CPC分类号： H01L51/0004 , H01L51/0003 , H01L51/0012 , H01L51/0026 , H01L51/0096 , H01L51/0512 , H01L51/052 , H01L51/0541 , H01L51/0545
摘要： The present invention relates to a process for preparing improved electronic devices, in particular organic field effect transistors (OFETs), with patterned insulator and organic semiconductor layers.
摘要翻译： 本发明涉及一种制备具有图案化绝缘体和有机半导体层的改进的电子器件，特别是有机场效应晶体管（OFET）的方法。
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公开(公告)号：US20110227055A1
公开(公告)日：2011-09-22
申请号：US13130800
申请日：2009-11-09
申请人： Miguel Carrasco-Orozco , Paul Craig Brookes , Katie Patterson , Frank Egon Meyer , Mark James , Toby Cull , David Christoph Mueller
发明人： Miguel Carrasco-Orozco , Paul Craig Brookes , Katie Patterson , Frank Egon Meyer , Mark James , Toby Cull , David Christoph Mueller
IPC分类号： H01L51/10 , H01L21/336 , B05D5/12 , B05D5/06
CPC分类号： C23C14/205 , C23C14/086 , C23C14/352 , H01L51/0021 , H01L51/0545 , H01L51/105 , Y02E10/549 , Y02P70/521
摘要： The invention relates to the use of a closed field unbalanced magnetron sputter ion plating process in the preparation of organic electronic devices or components thereof, and to organic electronic devices, or components thereof, obtainable by such a process.
摘要翻译： 本发明涉及封闭场不平衡磁控溅射离子电镀工艺在制备有机电子器件或其组件中的用途，以及可通过这种方法获得的有机电子器件或其组件。
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8.发明申请公开(公告)号：US20120153285A1
公开(公告)日：2012-06-21
申请号：US13392986
申请日：2010-08-06
申请人： Mark James , Nils Greinert , Miguel Carrasco-Orozco , Paul Craig Brookes , David Christoph Mueller , Philip Edward May , Stephen Armstrong , Sivanand Pennadam
发明人： Mark James , Nils Greinert , Miguel Carrasco-Orozco , Paul Craig Brookes , David Christoph Mueller , Philip Edward May , Stephen Armstrong , Sivanand Pennadam
CPC分类号： H01L51/107 , H01L51/0007 , H01L51/448 , H01L51/5253
摘要： The present invention relates to solution processable passivation layers for organic electronic (OE) devices, and to OE devices, in particular organic field effect transistors (OFETs), comprising such passivation layers.
摘要翻译： 本发明涉及用于有机电子（OE）器件的溶液可加工钝化层，以及包括这种钝化层的OE器件，特别是有机场效应晶体管（OFET）。
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公开(公告)号：US08426848B2
公开(公告)日：2013-04-23
申请号：US12989164
申请日：2009-03-26
IPC分类号： H01L29/08
CPC分类号： H01L51/0043 , H01L51/052 , H01L51/0529 , H01L2251/5361
摘要： The invention relates to an organic electronic (OE) device, in particular a transistor, comprising an interlayer between the gate insulator and the gate electrode, to novel processes for preparing the device, and to dielectric materials for use in the interlayer.
摘要翻译： 本发明涉及一种有机电子（OE）器件，特别是晶体管，其包括栅极绝缘体和栅电极之间的中间层，制备器件的新颖方法以及用于中间层的电介质材料。
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公开(公告)号：US20110037064A1
公开(公告)日：2011-02-17
申请号：US12989164
申请日：2009-03-26
CPC分类号： H01L51/0043 , H01L51/052 , H01L51/0529 , H01L2251/5361
摘要： The invention relates to an organic electronic (OE) device, in particular a transistor, comprising an interlayer between the gate insulator and the gate electrode, to novel processes for preparing the device, and to dielectric materials for use in the interlayer.
摘要翻译： 本发明涉及一种有机电子（OE）器件，特别是晶体管，其包括栅极绝缘体和栅电极之间的中间层，制备器件的新颖方法以及用于中间层的电介质材料。
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