发明申请
- 专利标题: SEMICONDUCTOR LIGHT EMMITING DEVICE
- 专利标题(中): 半导体照明装置
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申请号: US13226045申请日: 2011-09-06
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公开(公告)号: US20120056220A1公开(公告)日: 2012-03-08
- 发明人: Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
- 申请人: Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 主分类号: H01L33/60
- IPC分类号: H01L33/60
摘要:
According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
公开/授权文献
- US08441023B2 Semiconductor light emitting device 公开/授权日:2013-05-14
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