发明申请
- 专利标题: SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 半导体存储器件
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申请号: US13230122申请日: 2011-09-12
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公开(公告)号: US20120063206A1公开(公告)日: 2012-03-15
- 发明人: Kazuma Furutani , Yutaka Shionoiri
- 申请人: Kazuma Furutani , Yutaka Shionoiri
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2010-204405 20100913
- 主分类号: G11C11/24
- IPC分类号: G11C11/24
摘要:
An object is to provide a semiconductor memory device capable of copying memory data without using an external circuit. The semiconductor memory device includes a bit line to which first terminals of a plurality of memory cells are connected in common; a pre-charge circuit which is connected to the bit line and pre-charges the bit line with a specific potential in data reading; a data holding circuit comprising a capacitor which temporarily holds data read out from the memory cell or data which is written to the memory cell; and an inverted data output circuit which outputs inverted data of data held in the data holding circuit to the bit line. The inverted data output circuit includes a means for controlling output of inverted data of data held in the data holding circuit.
公开/授权文献
- US08750023B2 Semiconductor memory device 公开/授权日:2014-06-10
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