公开(公告)号：US20110254538A1

公开(公告)日：2011-10-20

申请号：US13085606

申请日：2011-04-13

申请人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

发明人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

IPC分类号： G01R19/00

CPC分类号： G01R31/2601 ,  G01R19/0092

摘要： One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured.

摘要翻译： 一个目的是提供一种用于测量可以测量微小电流的电流的方法。 流过电气元件的电流的值不是直接测量的，而是根据在预定周期内观察到的电位的变化计算出的。 用于测量电流的方法包括以下步骤：将预定电位施加到具有第一端子和第二端子的电气元件的第一端子; 测量连接到第二终端的节点的电位变化量; 以及根据所述电位变化量计算在所述电气元件的所述第一端子和所述第二端子之间流动的电流值。 因此，可以测量微小电流的值。

公开(公告)号：US08552712B2

公开(公告)日：2013-10-08

申请号：US13085606

申请日：2011-04-13

申请人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

发明人： Kiyoshi Kato ,  Yusuke Sekine ,  Yutaka Shionoiri ,  Kazuma Furutani

IPC分类号： G01R19/00 ,  G01R13/04

CPC分类号： G01R31/2601 ,  G01R19/0092

摘要： One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured.

摘要翻译： 一个目的是提供一种用于测量可以测量微小电流的电流的方法。 流过电气元件的电流的值不是直接测量的，而是根据在预定周期内观察到的电位的变化计算出的。 用于测量电流的方法包括以下步骤：将预定电位施加到具有第一端子和第二端子的电气元件的第一端子; 测量连接到第二终端的节点的电位变化量; 以及根据所述电位变化量计算在所述电气元件的所述第一端子和所述第二端子之间流动的电流值。 因此，可以测量微小电流的值。

公开(公告)号：US08809851B2

公开(公告)日：2014-08-19

申请号：US13101644

申请日：2011-05-05

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Yusuke Sekine ,  Kazuma Furutani ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Yusuke Sekine ,  Kazuma Furutani ,  Hiromichi Godo

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  G11C16/0433 ,  G11C16/26 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/41733 ,  H01L29/78621

摘要： A semiconductor device including a first transistor and a second transistor and a capacitor which are over the first transistor is provided. A semiconductor layer of the second transistor includes an offset region. In the second transistor provided with an offset region, the off-state current of the second transistor can be reduced. Thus, a semiconductor device which can hold data for a long time can be provided.

摘要翻译： 提供了包括在第一晶体管之上的第一晶体管和第二晶体管和电容器的半导体器件。 第二晶体管的半导体层包括偏移区域。 在设置有偏移区域的第二晶体管中，可以减小第二晶体管的截止电流。 因此，可以提供能够长时间保持数据的半导体器件。

公开(公告)号：US08750023B2

公开(公告)日：2014-06-10

申请号：US13230122

申请日：2011-09-12

申请人： Kazuma Furutani ,  Yutaka Shionoiri

发明人： Kazuma Furutani ,  Yutaka Shionoiri

IPC分类号： G11C11/24

CPC分类号： G11C16/02 ,  G11C11/404 ,  G11C11/405 ,  G11C2207/2236

摘要： An object is to provide a semiconductor memory device capable of copying memory data without using an external circuit. The semiconductor memory device includes a bit line to which first terminals of a plurality of memory cells are connected in common; a pre-charge circuit which is connected to the bit line and pre-charges the bit line with a specific potential in data reading; a data holding circuit comprising a capacitor which temporarily holds data read out from the memory cell or data which is written to the memory cell; and an inverted data output circuit which outputs inverted data of data held in the data holding circuit to the bit line. The inverted data output circuit includes a means for controlling output of inverted data of data held in the data holding circuit.

摘要翻译： 本发明的目的是提供一种能够在不使用外部电路的情况下复制存储器数据的半导体存储器件。 半导体存储器件包括多个存储器单元的第一端子共同连接的位线; 连接到位线的预充电电路，并在数据读取中对具有特定电位的位线进行预充电; 一种数据保持电路，包括暂时保存从存储单元读出的数据或写入存储单元的数据的电容器; 以及将保持在数据保持电路中的数据的反相数据输出到位线的反相数据输出电路。 反相数据输出电路包括用于控制保持在数据保持电路中的数据的反相数据的输出的装置。

公开(公告)号：US20120063206A1

公开(公告)日：2012-03-15

申请号：US13230122

申请日：2011-09-12

申请人： Kazuma Furutani ,  Yutaka Shionoiri

发明人： Kazuma Furutani ,  Yutaka Shionoiri

IPC分类号： G11C11/24

CPC分类号： G11C16/02 ,  G11C11/404 ,  G11C11/405 ,  G11C2207/2236

摘要： An object is to provide a semiconductor memory device capable of copying memory data without using an external circuit. The semiconductor memory device includes a bit line to which first terminals of a plurality of memory cells are connected in common; a pre-charge circuit which is connected to the bit line and pre-charges the bit line with a specific potential in data reading; a data holding circuit comprising a capacitor which temporarily holds data read out from the memory cell or data which is written to the memory cell; and an inverted data output circuit which outputs inverted data of data held in the data holding circuit to the bit line. The inverted data output circuit includes a means for controlling output of inverted data of data held in the data holding circuit.

摘要翻译： 本发明的目的是提供一种能够在不使用外部电路的情况下复制存储器数据的半导体存储器件。 半导体存储器件包括多个存储器单元的第一端子共同连接的位线; 连接到位线的预充电电路，并在数据读取中对具有特定电位的位线进行预充电; 一种数据保持电路，包括暂时保存从存储单元读出的数据或写入存储单元的数据的电容器; 以及将保持在数据保持电路中的数据的反相数据输出到位线的反相数据输出电路。 反相数据输出电路包括用于控制保持在数据保持电路中的数据的反相数据的输出的装置。

公开(公告)号：US20110278571A1

公开(公告)日：2011-11-17

申请号：US13101644

申请日：2011-05-05

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Yusuke Sekine ,  Kazuma Furutani ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Yutaka Shionoiri ,  Yusuke Sekine ,  Kazuma Furutani ,  Hiromichi Godo

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  G11C16/0433 ,  G11C16/26 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/41733 ,  H01L29/78621

摘要： A semiconductor device including a first transistor and a second transistor and a capacitor which are over the first transistor is provided. A semiconductor layer of the second transistor includes an offset region. In the second transistor provided with an offset region, the off-state current of the second transistor can be reduced. Thus, a semiconductor device which can hold data for a long time can be provided.

摘要翻译： 提供了包括在第一晶体管之上的第一晶体管和第二晶体管和电容器的半导体器件。 第二晶体管的半导体层包括偏移区域。 在设置有偏移区域的第二晶体管中，可以减小第二晶体管的截止电流。 因此，可以提供能够长时间保持数据的半导体器件。

公开(公告)号：US09448432B2

公开(公告)日：2016-09-20

申请号：US11383286

申请日：2006-05-15

申请人： Shunpei Yamazaki ,  Shingo Eguchi ,  Yutaka Shionoiri ,  Etsuko Fujimoto

发明人： Shunpei Yamazaki ,  Shingo Eguchi ,  Yutaka Shionoiri ,  Etsuko Fujimoto

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/123 ,  H01L27/1255 ,  H01L29/42384

摘要： It is an object to provide a display having high visibility and a transflective type liquid crystal display device having a reflection electrode having a concavo-convex structure formed without especially increasing the process. During manufacturing a transflective liquid crystal display device, a reflection electrode of a plurality of irregularly arranged island-like patterns and a transparent electrode of a transparent conductive film are layered in forming an electrode having transparent and reflection electrodes thereby having a concavo-convex form to enhance the scattering ability of light and hence the visibility of display. Furthermore, because the plurality of irregularly arranged island-like patterns can be formed simultaneous with an interconnection, a concavo-convex structure can be formed during the manufacturing process without especially increasing the patterning process only for forming a concavo-convex structure. It is accordingly possible to greatly reduce cost and improve productivity.

公开(公告)号：US09123581B2

公开(公告)日：2015-09-01

申请号：US13287569

申请日：2011-11-02

申请人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

发明人： Toshihiko Saito ,  Yutaka Shionoiri ,  Kiyoshi Kato

IPC分类号： G06K19/06 ,  H01L27/12 ,  G06K19/07 ,  H01L21/84

CPC分类号： H01L27/12 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H01L21/84

摘要： An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit 104, but rather an output VDD0 of a rectifier circuit portion 103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.

摘要翻译： 本发明的目的是提供一种使用小电路区域可以获得将数据写入存储器所需的高电位的半导体器件。 在本发明中，通过使用升压电路的输入电压而不是调节器电路104的常规使用的输出VDD，而是使用比VDD高的电压的整流电路部分103的输出VDD0， 可以以小的电路面积获得将数据写入存储器所必需的。

公开(公告)号：US08854191B2

公开(公告)日：2014-10-07

申请号：US11716042

申请日：2007-03-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

IPC分类号： H04Q5/22 ,  G06K19/07

CPC分类号： G06K19/0723 ,  G06K19/0701 ,  G06K19/0702

摘要： To provide a semiconductor device including an RFID which can transmit and receive individual information without checking of the remaining charge of a battery or a replacing operation of the battery in accordance with deterioration over time of the battery for driving, and can maintain an excellent state for transmission and reception of individual information even when power of a radio wave or an electromagnetic wave from outside is insufficient. A battery (also described as a secondary battery) is provided as a power supply for supplying power to the RFID. Then, when power which is obtained from a signal received from outside is larger than predetermined power, its surplus power is stored in the battery; and when the power which is obtained from the signal received from outside is smaller than the predetermined power, power which is obtained from the battery is used for the power for driving.

摘要翻译： 为了提供一种包括RFID的半导体器件，其可以根据用于驱动的​​电池的劣化随时检测电池的剩余电量或电池的替换操作而发送和接收各个信息，并且可以保持优异的状态 即使在来自外部的无线电波或电磁波的功率不足的情况下，也可以发送和接收个别信息。 提供电池（也称为二次电池）作为向RFID提供电力的电源。 然后，当从外部接收的信号获得的功率大于预定功率时，其剩余功率被存储在电池中; 并且当从外部接收的信号获得的功率小于预定功率时，从电池获得的功率用于驱动电力。

公开(公告)号：US08570065B2

公开(公告)日：2013-10-29

申请号：US13437961

申请日：2012-04-03

申请人： Hidetomo Kobayashi ,  Masami Endo ,  Yutaka Shionoiri ,  Hiroki Dembo ,  Tatsuji Nishijima ,  Kazuaki Ohshima ,  Seiichi Yoneda ,  Jun Koyama

发明人： Hidetomo Kobayashi ,  Masami Endo ,  Yutaka Shionoiri ,  Hiroki Dembo ,  Tatsuji Nishijima ,  Kazuaki Ohshima ,  Seiichi Yoneda ,  Jun Koyama

IPC分类号： H03K19/177 ,  G11C11/24

CPC分类号： H03K19/17796 ,  G11C16/0433 ,  H01L27/11803 ,  H01L27/1203

摘要： A low-power programmable LSI that can perform dynamic configuration is provided. The programmable LSI includes a plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements, in accordance with the configuration data stored in the configuration memory. The configuration memory includes a set of a volatile storage circuit and a nonvolatile storage circuit. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer and a capacitor whose one of a pair of electrodes is electrically connected to a node that is set in a floating state when the transistor is turned off.

摘要翻译： 提供了可以执行动态配置的低功耗可编程LSI。 可编程LSI包括多个逻辑元件。 多个逻辑元件各自包括配置存储器。 多个逻辑元件中的每一个执行不同的运算处理，并且根据存储在配置存储器中的配置数据改变逻辑元件之间的电连接。 配置存储器包括一组易失性存储电路和非易失性存储电路。 非易失性存储电路包括其沟道形成在氧化物半导体层中的晶体管和一对电极中的一个电极与晶体管截止时被设置为浮置状态的节点电连接的电容器。