发明申请
- 专利标题： METHODS OF FORMING LOW INTERFACE RESISTANCE CONTACTS AND STRUCTURES FORMED THEREBY
- 专利标题（中）： 形成低界面电阻接触和结构的方法
-
申请号： US13292865申请日： 2011-11-09
-
公开(公告)号： US20120068180A1公开(公告)日： 2012-03-22
- 发明人: Rishabh Mehandru , Bernhard Sell , Anand Murthy , Lucian Shifren
- 申请人： Rishabh Mehandru , Bernhard Sell , Anand Murthy , Lucian Shifren
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a tapered contact opening in an ILD disposed on a substrate, wherein a source/drain contact area is exposed, preamorphizing a portion of a source drain region of the substrate, implanting boron into the source/drain region through the tapered contact opening, forming a metal layer on the source/drain contact area, and then annealing the metal layer to form a metal silicide.
信息查询
IPC分类:
