发明申请
- 专利标题： SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND CAMERA MODULE
- 专利标题（中）： 半导体器件制造方法，半导体器件和相机模块
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申请号： US13220001申请日： 2011-08-29
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公开(公告)号： US20120068290A1公开(公告)日： 2012-03-22
- 发明人: Takashi Shirono , Kazumasa Tanida , Naoko Yamaguchi , Satoshi Hongo , Tsuyoshi Matsumura
- 申请人： Takashi Shirono , Kazumasa Tanida , Naoko Yamaguchi , Satoshi Hongo , Tsuyoshi Matsumura
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-208067 20100916
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; B32B9/04 ; H01L21/762
摘要：
According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.
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