-
1.发明授权Manufacturing method of semiconductor device, semiconductor substrate, and camera module 有权半导体器件，半导体衬底和相机模块的制造方法公开(公告)号：US08778778B2
公开(公告)日：2014-07-15
申请号：US13212644
申请日：2011-08-18
申请人： Kazumasa Tanida , Masahiro Sekiguchi , Masayuki Dohi , Tsuyoshi Matsumura , Hideo Numata , Mari Otsuka , Naoko Yamaguchi , Takashi Shirono , Satoshi Hongo
发明人： Kazumasa Tanida , Masahiro Sekiguchi , Masayuki Dohi , Tsuyoshi Matsumura , Hideo Numata , Mari Otsuka , Naoko Yamaguchi , Takashi Shirono , Satoshi Hongo
IPC分类号： H01L21/77
CPC分类号： H01L27/1464 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14683 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.
摘要翻译： 根据实施例，在半导体衬底的第一表面上形成有源层，在有源层上形成布线层，并且覆盖布线层形成绝缘层。 半导体衬底的第一表面经由绝缘层接合到支撑衬底，并且结合到支撑衬底的半导体衬底被薄化，从第二表面离开具有预定厚度的半导体衬底覆盖有源层。 去除减薄的半导体衬底的面积的至少一部分以暴露活性层。
-
2.发明授权Semiconductor device manufacturing method, semiconductor device, and camera module 失效半导体器件制造方法，半导体器件和相机模块公开(公告)号：US08609511B2
公开(公告)日：2013-12-17
申请号：US13220001
申请日：2011-08-29
IPC分类号： H01L21/46
CPC分类号： H01L27/14618 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.
摘要翻译： 根据一个实施例，在第一基板的表面，背面和侧面上形成绝缘膜。 接下来，去除在第一基板的表面上形成的绝缘膜。 然后，在第一基板的表面上形成接合层，绝缘膜已经从该表面移除。 随后，第一基板经由接合层与第二基板接合。
-
3.发明授权Method of manufacturing semiconductor device, semiconductor device, and camera module 失效制造半导体器件，半导体器件和相机模块的方法公开(公告)号：US08748316B2
公开(公告)日：2014-06-10
申请号：US13169548
申请日：2011-06-27
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/14683 , H01L27/14625 , H01L27/14632 , H01L27/1464
摘要： According to an embodiment, a method of manufacturing a semiconductor device includes polishing a peripheral portion of the semiconductor substrate, and forming a protective film to be an insulating film, on a surface of the semiconductor substrate including a surface exposed by the polishing.
摘要翻译： 根据实施例，制造半导体器件的方法包括在半导体衬底的包括通过抛光暴露的表面的表面上抛光半导体衬底的周边部分并形成作为绝缘膜的保护膜。
-
4.发明申请SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND CAMERA MODULE 失效半导体器件制造方法，半导体器件和相机模块公开(公告)号：US20120068290A1
公开(公告)日：2012-03-22
申请号：US13220001
申请日：2011-08-29
IPC分类号： H01L31/0232 , B32B9/04 , H01L21/762
CPC分类号： H01L27/14618 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.
摘要翻译： 根据一个实施例，在第一基板的表面，背面和侧面上形成绝缘膜。 接下来，去除在第一基板的表面上形成的绝缘膜。 然后，在第一基板的表面上形成接合层，绝缘膜已经从该表面移除。 随后，第一基板经由接合层与第二基板接合。
-
5.发明申请MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND CAMERA MODULE 有权半导体器件，半导体衬底和摄像机模块的制造方法公开(公告)号：US20120049312A1
公开(公告)日：2012-03-01
申请号：US13212644
申请日：2011-08-18
申请人： Kazumasa TANIDA , Masahiro Sekiguchi , Masayuki Dohi , Tsuyoshi Matsumura , Hideo Numata , Mari Otsuka , Naoko Yamaguchi , Takashi Shirono , Satoshi Hongo
发明人： Kazumasa TANIDA , Masahiro Sekiguchi , Masayuki Dohi , Tsuyoshi Matsumura , Hideo Numata , Mari Otsuka , Naoko Yamaguchi , Takashi Shirono , Satoshi Hongo
IPC分类号： H01L27/146 , H01L29/06 , H01L21/30
CPC分类号： H01L27/1464 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14683 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.
摘要翻译： 根据实施例，在半导体衬底的第一表面上形成有源层，在有源层上形成布线层，并且覆盖布线层形成绝缘层。 半导体衬底的第一表面经由绝缘层接合到支撑衬底，并且结合到支撑衬底的半导体衬底被薄化，从第二表面离开具有预定厚度的半导体衬底覆盖有源层。 去除减薄的半导体衬底的面积的至少一部分以暴露活性层。
-
6.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND CAMERA MODULE 失效制造半导体器件，半导体器件和相机模块的方法公开(公告)号：US20110317050A1
公开(公告)日：2011-12-29
申请号：US13169548
申请日：2011-06-27
CPC分类号： H01L27/14683 , H01L27/14625 , H01L27/14632 , H01L27/1464
摘要： According to an embodiment, a method of manufacturing a semiconductor device includes polishing a peripheral portion of the semiconductor substrate, and forming a protective film to be an insulating film, on a surface of the semiconductor substrate including a surface exposed by the polishing.
摘要翻译： 根据实施例，制造半导体器件的方法包括在半导体衬底的包括通过抛光暴露的表面的表面上抛光半导体衬底的周边部分并形成作为绝缘膜的保护膜。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.01 秒)
