Invention Application
- Patent Title: STACKED STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 堆叠结构及其制造方法
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Application No.: US13375159Application Date: 2010-05-07
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Publication No.: US20120069487A1Publication Date: 2012-03-22
- Inventor: Hitoshi Noguchi , Naoki Tanaka , Tatsuya Nakamura
- Applicant: Hitoshi Noguchi , Naoki Tanaka , Tatsuya Nakamura
- Applicant Address: JP Moriguchi-shi, Osaka
- Assignee: SANYO ELECTRIC CO., LTD.
- Current Assignee: SANYO ELECTRIC CO., LTD.
- Current Assignee Address: JP Moriguchi-shi, Osaka
- Priority: JP2009-130015 20090529
- International Application: PCT/JP2010/057817 WO 20100507
- Main IPC: H01G4/08
- IPC: H01G4/08 ; C23C14/34 ; C23C16/44 ; B05D5/12 ; B05D1/12

Abstract:
[Problem to be Solved]A problem to be solved is to provide a stacked structure and a method of manufacturing the same that make generation of insulation breakdown unlikely, while providing a high dielectric constant and a high quality.[Means for Solving Problem]A stacked structure according to the present invention is a stacked structure in which a dielectric layer 3 is provided between a first conductive layer 1 and a second conductive layer 2. The dielectric layer 3 includes a dielectric film 31 formed on the first conductive layer 1, and a dielectric particle film 32 formed by applying a dispersion solution containing dielectric particles onto the dielectric film 31. A method of manufacturing the stacked structure according to the present invention includes a dielectric layer forming step of forming the dielectric layer 3 on the first conductive layer 1, and a conductive layer forming step of forming the second conductive layer 2 on the dielectric layer 3. The dielectric layer forming step includes a dielectric film forming step of forming the dielectric film 31 on the first conductive layer 1, and a particle film forming step of forming the dielectric particle film 32 by applying a dispersion solution containing dielectric particles onto the dielectric film 31.
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