发明申请
- 专利标题： SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件制造方法，衬底加工设备和半导体器件
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申请号： US13250708申请日： 2011-09-30
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公开(公告)号： US20120086107A1公开(公告)日： 2012-04-12
- 发明人: Katsuhiko Yamamoto , Yuji Takebayashi , Tatsuyuki Saito , Masahisa Okuno
- 申请人： Katsuhiko Yamamoto , Yuji Takebayashi , Tatsuyuki Saito , Masahisa Okuno
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-227649 20101007; JP2010-252882 20101111
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L21/26 ; C23C16/511
摘要：
A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.