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1.发明申请SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE 有权半导体器件制造方法，衬底加工设备和半导体器件公开(公告)号：US20120086107A1
公开(公告)日：2012-04-12
申请号：US13250708
申请日：2011-09-30
IPC分类号： H01L29/02 , H01L21/26 , C23C16/511
CPC分类号： H01L21/67115 , C23C16/405 , C23C16/56 , H01L21/02189 , H01L21/0228 , H01L21/02337 , H01L21/02345 , H01L28/40
摘要： A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.
摘要翻译： 一种半导体器件制造方法，包括将形成有高k膜的衬底加载到处理室中，通过在衬底上照射微波加热高k膜并进行重整处理，并将衬底从 处理室。
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2.发明授权Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device 有权半导体装置的制造方法，基板处理装置及半导体装置公开(公告)号：US08866271B2
公开(公告)日：2014-10-21
申请号：US13250708
申请日：2011-09-30
CPC分类号： H01L21/67115 , C23C16/405 , C23C16/56 , H01L21/02189 , H01L21/0228 , H01L21/02337 , H01L21/02345 , H01L28/40
摘要： A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.
摘要翻译： 一种半导体器件制造方法，包括将形成有高k膜的衬底加载到处理室中，通过在衬底上照射微波加热高k膜并进行重整处理，并将衬底从 处理室。
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3.发明申请METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE 审中-公开制造半导体器件的方法，衬底加工设备和半导体器件公开(公告)号：US20120280369A1
公开(公告)日：2012-11-08
申请号：US13498020
申请日：2010-12-15
申请人： Tatsuyuki Saito , Kazuhiro Yuasa , Yoshiro Hirose , Yuji Takebayashi , Ryota Sasajima , Katsuhiko Yamamoto , Hirohisa Yamazaki , Shintaro Kogura , Hirotaka Hamamura
发明人： Tatsuyuki Saito , Kazuhiro Yuasa , Yoshiro Hirose , Yuji Takebayashi , Ryota Sasajima , Katsuhiko Yamamoto , Hirohisa Yamazaki , Shintaro Kogura , Hirotaka Hamamura
CPC分类号： C23C16/45563 , C23C16/34 , C23C16/405 , C23C16/45527 , C23C16/45561 , C23C16/45578 , C23C16/56 , H01L21/02189 , H01L21/0228 , H01L21/02337 , H01L21/02356 , H01L28/40 , H01L28/60
摘要： There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively.
摘要翻译： 提供了一种用于制造半导体器件的方法，包括同时或交替地暴露具有层压或暴露的具有不同元素组分的两种或更多种薄膜的衬底; 并对薄膜进行不同的改性处理。
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4.发明授权Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation 有权通过等离子体成膜法和等离子体氮化法制造非易失性半导体存储器件的方法公开(公告)号：US08084315B2
公开(公告)日：2011-12-27
申请号：US12622816
申请日：2009-11-20
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8238 , H01L29/792
CPC分类号： H01L21/28282 , H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28273 , H01L21/3115 , H01L21/3144 , H01L29/513 , H01L29/518 , H01L29/7885
摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.
摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。
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公开(公告)号：US20090029416A1
公开(公告)日：2009-01-29
申请号：US11945771
申请日：2007-11-27
申请人： Hikaru Takakura , Mio Morishita , Katsuhiko Yamamoto , Masanori Mitta , Kiyozo Asada , Susumu Tsunasawa , Ikunoshin Kato
发明人： Hikaru Takakura , Mio Morishita , Katsuhiko Yamamoto , Masanori Mitta , Kiyozo Asada , Susumu Tsunasawa , Ikunoshin Kato
CPC分类号： C12N9/52
摘要： There are provided hyperthermostable proteases having an amino acid sequences represented by SEQ ID Nos. 1, 3 and 5 of the Sequence Listing or functional equivalents thereof and hyperthermostable protease genes encoding those hyperthermostable protease. There is also disclosed a process for preparation of a hyperthermostable protease by culturing a transformant containing the gene.
摘要翻译： 提供了具有由序列表的SEQ ID No.1,3和5表示的氨基酸序列或其功能等同物的超热稳定蛋白酶和编码那些超热稳定蛋白酶的超热稳定蛋白酶基因。 还公开了通过培养含有该基因的转化体来制备超热稳定蛋白酶的方法。
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公开(公告)号：US20080113252A1
公开(公告)日：2008-05-15
申请号：US11792094
申请日：2005-12-13
申请人： Katsuhiko Yamamoto , Osamu Yumita , Naoki Kanie , Naohiro Yoshida
发明人： Katsuhiko Yamamoto , Osamu Yumita , Naoki Kanie , Naohiro Yoshida
CPC分类号： H01M8/04097 , H01M8/04223 , H01M8/04228 , H01M8/0432 , H01M8/0438 , H01M8/04753 , H01M8/04761 , H01M8/0625 , H01M8/0662 , H01M2008/1095
摘要： It is an object to provide a simple fuel cell system and to provide a fuel cell system capable of reducing the amount of consumption of fuel gas at the time of completion of operation. A fuel cell system includes a supply piping from a fuel gas supply source storing fuel gas to a gas inlet of a fuel cell and a circulation piping from a gas outlet of the fuel cell to a junction at which the circulation piping joins the supply piping. A regulating valve and a shut-off valve are disposed on the upstream side of the junction in the supply piping. A portion on the downstream side of the junction in the supply piping and the circulation piping are in constant communicated.
摘要翻译： 本发明的目的是提供简单的燃料电池系统，并且提供能够在完成操作时减少燃料气体消耗量的燃料电池系统。 燃料电池系统包括从储存燃料气体的燃料气体供给源到燃料电池的气体入口的燃料气体供给源和从燃料电池的气体出口到循环配管与供给配管连接的连接部的循环配管。 调节阀和截止阀设置在供应管道中的接合部的上游侧。 供应管道和循环管道中的连接处的下游侧的一部分不断地连通。
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7.发明申请公开(公告)号：US20080032514A1
公开(公告)日：2008-02-07
申请号：US11791222
申请日：2005-11-29
CPC分类号： H01L21/02148 , C23C16/401 , C23C16/45523 , H01L21/0228 , H01L21/31604
摘要： The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured. A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.
摘要翻译： 提高了控制金属硅酸盐膜中的金属和硅的浓度比的能力，能够制造高品质的半导体装置。 提供了将含有金属原子的第一原料和含有硅原子和氮原子的第二原料供给到处理室（4）中的步骤; 以及在基板（30）上形成含有所述金属原子和硅原子的金属硅酸盐膜。 在形成金属硅酸盐膜的步骤中控制第一和第二原料的原料供给比，从而控制所得金属硅酸盐膜中的金属和硅的浓度比。
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公开(公告)号：US07286110B2
公开(公告)日：2007-10-23
申请号：US10778165
申请日：2004-02-17
申请人： Yoshikazu Yokota , Kunihiko Tani , Gorou Sakamaki , Katsuhiko Yamamoto , Takashi Yoneoka , Kazuhisa Higuchi , Kimihiko Sugiyama
发明人： Yoshikazu Yokota , Kunihiko Tani , Gorou Sakamaki , Katsuhiko Yamamoto , Takashi Yoneoka , Kazuhisa Higuchi , Kimihiko Sugiyama
IPC分类号： E09B3/20
CPC分类号： G09G3/36 , G09G3/2096 , G09G3/3611 , G09G3/3622 , G09G3/3644 , G09G3/3674 , G09G3/3681 , G09G3/3696 , G09G5/22 , G09G5/222 , G09G2300/0426 , G09G2310/0213 , G09G2310/0232 , G09G2310/0278 , G09G2310/04 , G09G2320/066 , G09G2320/08 , G09G2330/02 , G09G2330/021 , G09G2330/022 , G09G2330/023 , G09G2340/0414 , G09G2340/0485
摘要： In conventional liquid crystal display controllers such as for portable telephone sets, the display is reduced in the stand-by state but the liquid crystal display duty is not changed, i.e., even the common electrodes of the rows that are not producing display are scanned, and the consumption of electric power is not decreased to a sufficient degree in the stand-by state. A liquid crystal display controller (2) includes a drive duty selection register (34) capable of being rewritten by a microprocessor (1), and a drive bias selection register (32). When the display is changed from the whole display on a liquid crystal display panel (3) to a partial display on part of the rows only, the preset values of the drive duty selection register and of the drive bias selection register are changed, so that the display is selectively produced on a portion of the liquid crystal display panel at a low voltage with a low-duty drive.
摘要翻译： 在诸如便携式电话机的常规液晶显示控制器中，显示器在待机状态下降低，但是液晶显示器占空比不改变，即使扫描不产生显示器的行的公共电极， 并且在待机状态下，电力的消耗不会降低到足够的程度。 液晶显示控制器（2）包括能够由微处理器（1）重写的驱动占空比选择寄存器（34）和驱动偏置选择寄存器（32）。 当显示器从液晶显示面板（3）上的整个显示器改变为仅部分行的部分显示时，驱动占空比选择寄存器和驱动偏置选择寄存器的预设值改变，使得 在液晶显示面板的一部分以低负载驱动的低电压选择性地产生显示。
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9.发明授权Cooling unit for cooling a heat-generating components and electronic apparatus having the cooling unit 有权用于冷却具有冷却单元的发热部件和电子设备的冷却单元
公开(公告)号：US6049455A
公开(公告)日：2000-04-11
申请号：US337752
申请日：1999-06-22
CPC分类号： G06F1/203 , F04D29/4226 , F04D29/441
摘要： A cooling unit comprising a heat radiating plate and an electric fan device. The heat radiating plate has thermal conductivity and comprises a heat receiving portion and a heat exchanging portion, which are arranged side by side. The heat receiving portion is thermally connected to a heat-generating component. The heat exchanging portion is made integral with the heat receiving portion. The fan device having a fan and a flat fan casing. The fan casing has an air inlet port for drawing cooling air when the fan is driven, an air outlet port for guiding the cooling air, and an opening opposing the inlet port. The opening closed by the heat radiating plate.
摘要翻译： 一种冷却单元，包括散热板和电风扇装置。 散热板具有导热性并且包括并排布置的热接收部分和热交换部分。 热接收部分热连接到发热部件。 热交换部与热接收部一体地形成。 风扇装置具有风扇和平坦的风扇壳体。 风扇壳体具有用于在驱动风扇时抽出冷却空气的空气入口，用于引导冷却空气的空气出口以及与入口相对的开口。 开口由散热板封闭。
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公开(公告)号：US5470732A
公开(公告)日：1995-11-28
申请号：US688426
申请日：1991-04-22
CPC分类号： C12N9/22 , Y10S435/84 , Y10S435/843
摘要： A restriction enzyme is obtained by cultivating a strain of Brevibacterium linens and recovering the restriction enzyme. The restriction enzyme, which has the same specificity as AvrII, cleaves the following nucleotide sequence specifically at the arrow-marked sites: ##STR1##
摘要翻译： 通过培养短杆菌亚麻菌株并回收限制酶获得限制酶。 与AvrII具有相同特异性的限制性酶特异性地在箭头标记的位点切割以下核苷酸序列：
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